Laser-doped selective emitters for photovoltaic applications

J. Woolridge, Edward William Reutzel, S Ashok, L. Zou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.

Original languageEnglish (US)
Title of host publication16th International Workshop on Physics of Semiconductor Devices
PublisherSPIE
ISBN (Print)9780819493002
DOIs
StatePublished - Jan 1 2012
Event16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 - Kanpur, India
Duration: Dec 19 2011Dec 22 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8549
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011
CountryIndia
CityKanpur
Period12/19/1112/22/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Laser-doped selective emitters for photovoltaic applications'. Together they form a unique fingerprint.

  • Cite this

    Woolridge, J., Reutzel, E. W., Ashok, S., & Zou, L. (2012). Laser-doped selective emitters for photovoltaic applications. In 16th International Workshop on Physics of Semiconductor Devices [85493H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8549). SPIE. https://doi.org/10.1117/12.927446