@inproceedings{9b3fa4592bac43118a405a243186460e,
title = "Laser-doped selective emitters for photovoltaic applications",
abstract = "Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.",
author = "J. Woolridge and Reutzel, {Edward William} and S Ashok and L. Zou",
year = "2012",
month = jan,
day = "1",
doi = "10.1117/12.927446",
language = "English (US)",
isbn = "9780819493002",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "16th International Workshop on Physics of Semiconductor Devices",
address = "United States",
note = "16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 ; Conference date: 19-12-2011 Through 22-12-2011",
}