Laser-doped selective emitters for photovoltaic applications

J. Woolridge, Edward William Reutzel, S. Ashok, L. Zou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.

Original languageEnglish (US)
Title of host publication16th International Workshop on Physics of Semiconductor Devices
PublisherSPIE
Volume8549
ISBN (Print)9780819493002
DOIs
StatePublished - Jan 1 2012
Event16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 - Kanpur, India
Duration: Dec 19 2011Dec 22 2011

Other

Other16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011
CountryIndia
CityKanpur
Period12/19/1112/22/11

Fingerprint

emitters
Doping (additives)
Laser
Lasers
lasers
Contact Resistance
Laser Processing
Photolithography
labor
Energy Distribution
Solar Cells
Contact resistance
photolithography
Processing
contact resistance
Solar cells
energy distribution
fluence
pulse duration
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Woolridge, J., Reutzel, E. W., Ashok, S., & Zou, L. (2012). Laser-doped selective emitters for photovoltaic applications. In 16th International Workshop on Physics of Semiconductor Devices (Vol. 8549). [85493H] SPIE. https://doi.org/10.1117/12.927446
Woolridge, J. ; Reutzel, Edward William ; Ashok, S. ; Zou, L. / Laser-doped selective emitters for photovoltaic applications. 16th International Workshop on Physics of Semiconductor Devices. Vol. 8549 SPIE, 2012.
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Woolridge, J, Reutzel, EW, Ashok, S & Zou, L 2012, Laser-doped selective emitters for photovoltaic applications. in 16th International Workshop on Physics of Semiconductor Devices. vol. 8549, 85493H, SPIE, 16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011, Kanpur, India, 12/19/11. https://doi.org/10.1117/12.927446

Laser-doped selective emitters for photovoltaic applications. / Woolridge, J.; Reutzel, Edward William; Ashok, S.; Zou, L.

16th International Workshop on Physics of Semiconductor Devices. Vol. 8549 SPIE, 2012. 85493H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Woolridge J, Reutzel EW, Ashok S, Zou L. Laser-doped selective emitters for photovoltaic applications. In 16th International Workshop on Physics of Semiconductor Devices. Vol. 8549. SPIE. 2012. 85493H https://doi.org/10.1117/12.927446