Laser-induced damage in quartz: A study of the influence of impurities and defects

Pradip Bandyopadhyay, Larry D. Merkle

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

It has been observed that samples of high-quality cultured quartz can differ markedly from sample to sample in their resistance to laser-induced catastrophic damage. The bulk damage properties of quartz from several sources have been investigated using both 1064- and 532-nm laser pulses. It is found that the single-pulse damage "threshold" is ill defined, indicating considerable inhomogeneity in even the best samples. Neither resistance to damage by a single-pulse nor damage behavior under multiple-pulse irradiation exhibit any correlation with the concentrations of Al or OH, two impurities important to other properties of quartz. Further, the dependence of damage resistance on temperature and on electron irradiation is much weaker than would be expected if Al were important to the damage process. However, there does appear to be a correlation with the density of coarsely spaced defects revealed in the damage morphology and in chemical etching. Thus, it appears that even in high-quality quartz-laser-induced damage is initiated on low-concentration defects, but that the relevant defects are not related to aluminum impurities.

Original languageEnglish (US)
Pages (from-to)1392-1398
Number of pages7
JournalJournal of Applied Physics
Volume63
Issue number5
DOIs
StatePublished - Dec 1 1988

Fingerprint

quartz
damage
impurities
defects
lasers
pulses
electron irradiation
yield point
low concentrations
inhomogeneity
etching
aluminum
irradiation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{297e9f2f33b6443f983777d8219e5d0f,
title = "Laser-induced damage in quartz: A study of the influence of impurities and defects",
abstract = "It has been observed that samples of high-quality cultured quartz can differ markedly from sample to sample in their resistance to laser-induced catastrophic damage. The bulk damage properties of quartz from several sources have been investigated using both 1064- and 532-nm laser pulses. It is found that the single-pulse damage {"}threshold{"} is ill defined, indicating considerable inhomogeneity in even the best samples. Neither resistance to damage by a single-pulse nor damage behavior under multiple-pulse irradiation exhibit any correlation with the concentrations of Al or OH, two impurities important to other properties of quartz. Further, the dependence of damage resistance on temperature and on electron irradiation is much weaker than would be expected if Al were important to the damage process. However, there does appear to be a correlation with the density of coarsely spaced defects revealed in the damage morphology and in chemical etching. Thus, it appears that even in high-quality quartz-laser-induced damage is initiated on low-concentration defects, but that the relevant defects are not related to aluminum impurities.",
author = "Pradip Bandyopadhyay and Merkle, {Larry D.}",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.339970",
language = "English (US)",
volume = "63",
pages = "1392--1398",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Laser-induced damage in quartz : A study of the influence of impurities and defects. / Bandyopadhyay, Pradip; Merkle, Larry D.

In: Journal of Applied Physics, Vol. 63, No. 5, 01.12.1988, p. 1392-1398.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Laser-induced damage in quartz

T2 - A study of the influence of impurities and defects

AU - Bandyopadhyay, Pradip

AU - Merkle, Larry D.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - It has been observed that samples of high-quality cultured quartz can differ markedly from sample to sample in their resistance to laser-induced catastrophic damage. The bulk damage properties of quartz from several sources have been investigated using both 1064- and 532-nm laser pulses. It is found that the single-pulse damage "threshold" is ill defined, indicating considerable inhomogeneity in even the best samples. Neither resistance to damage by a single-pulse nor damage behavior under multiple-pulse irradiation exhibit any correlation with the concentrations of Al or OH, two impurities important to other properties of quartz. Further, the dependence of damage resistance on temperature and on electron irradiation is much weaker than would be expected if Al were important to the damage process. However, there does appear to be a correlation with the density of coarsely spaced defects revealed in the damage morphology and in chemical etching. Thus, it appears that even in high-quality quartz-laser-induced damage is initiated on low-concentration defects, but that the relevant defects are not related to aluminum impurities.

AB - It has been observed that samples of high-quality cultured quartz can differ markedly from sample to sample in their resistance to laser-induced catastrophic damage. The bulk damage properties of quartz from several sources have been investigated using both 1064- and 532-nm laser pulses. It is found that the single-pulse damage "threshold" is ill defined, indicating considerable inhomogeneity in even the best samples. Neither resistance to damage by a single-pulse nor damage behavior under multiple-pulse irradiation exhibit any correlation with the concentrations of Al or OH, two impurities important to other properties of quartz. Further, the dependence of damage resistance on temperature and on electron irradiation is much weaker than would be expected if Al were important to the damage process. However, there does appear to be a correlation with the density of coarsely spaced defects revealed in the damage morphology and in chemical etching. Thus, it appears that even in high-quality quartz-laser-induced damage is initiated on low-concentration defects, but that the relevant defects are not related to aluminum impurities.

UR - http://www.scopus.com/inward/record.url?scp=0001699246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001699246&partnerID=8YFLogxK

U2 - 10.1063/1.339970

DO - 10.1063/1.339970

M3 - Article

AN - SCOPUS:0001699246

VL - 63

SP - 1392

EP - 1398

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -