Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Joan Marie Redwing, K. P. Lee, S. J. Pearton

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Abstract

AlxGa1-xN (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67 × 105 V cm-1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices.

Original languageEnglish (US)
Pages (from-to)823-825
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number6
DOIs
StatePublished - Feb 5 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Zhang, A. P., Johnson, J. W., Ren, F., Han, J., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M., Lee, K. P., & Pearton, S. J. (2001). Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage. Applied Physics Letters, 78(6), 823-825. https://doi.org/10.1063/1.1346622