TY - GEN
T1 - Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation
AU - Ashton, J. P.
AU - Lenahan, P. M.
AU - Lichtenwalner, D. J.
AU - Lelis, A. J.
N1 - Funding Information:
ACKNOWLEDGMENT This work at Penn State was supported by the U.S. Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Army Research Laboratory.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - 4H-SiC metal-oxide-semiconductor field-effect transistors have a substantially lower effective channel mobility than silicon-based counterparts. Nitric oxide annealing has been primarily utilized to provide an order of magnitude improvement in the effective channel mobility. Barium interface layers provide an additional doubling of the mobility over nitric oxide anneals. However, barium-based 4H-SiC transistors show more susceptibility to oxide leakage. We have investigated the atomic scale mechanisms of oxide leakage in barium-based devices with electrically detected magnetic resonance. We observe the presence of E' centers within the oxides of modestly stressed devices. Our measurements directly demonstrate that these E' centers are important and very likely the dominating cause of these leakage currents. In conventional silicon-based devices, E' centers are known to be important defects in reliability issues such as bias temperature instabilities and stress-induced leakage currents.
AB - 4H-SiC metal-oxide-semiconductor field-effect transistors have a substantially lower effective channel mobility than silicon-based counterparts. Nitric oxide annealing has been primarily utilized to provide an order of magnitude improvement in the effective channel mobility. Barium interface layers provide an additional doubling of the mobility over nitric oxide anneals. However, barium-based 4H-SiC transistors show more susceptibility to oxide leakage. We have investigated the atomic scale mechanisms of oxide leakage in barium-based devices with electrically detected magnetic resonance. We observe the presence of E' centers within the oxides of modestly stressed devices. Our measurements directly demonstrate that these E' centers are important and very likely the dominating cause of these leakage currents. In conventional silicon-based devices, E' centers are known to be important defects in reliability issues such as bias temperature instabilities and stress-induced leakage currents.
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U2 - 10.1109/IRPS45951.2020.9128320
DO - 10.1109/IRPS45951.2020.9128320
M3 - Conference contribution
AN - SCOPUS:85088391822
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -