Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

Patrick M. Lenahan, J. J. Mele, R. K. Lowry, D. Woodbury

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We use electron spin resonance and current density versus electric field measurements to link silicon dangling bond defects, called E′ centers, to leakage currents in thin films of SiO2 on silicon.

Original languageEnglish (US)
Pages (from-to)835-839
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 B
DOIs
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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