Light emission properties of GaN-based double heterostructures and quantum wells

D. A.S. Loeber, J. M. Redwing, N. G. Anderson, M. A. Tischler

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Edge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metallorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (approx.1 angstrom) modes which are evenly spaced by 10angstrom to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

Original languageEnglish (US)
Pages (from-to)949-954
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Fingerprint

Light emission
Semiconductor quantum wells
light emission
Heterojunctions
quantum wells
Pumps
Luminescence
Lasers
pumps
Stimulated emission
Metallorganic vapor phase epitaxy
Aluminum Oxide
luminescence
nitrogen lasers
Sapphire
Spectrometers
stimulated emission
Nitrogen
Demonstrations
vapor phase epitaxy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Light emission properties of GaN-based double heterostructures and quantum wells",
abstract = "Edge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metallorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (approx.1 angstrom) modes which are evenly spaced by 10angstrom to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.",
author = "Loeber, {D. A.S.} and Redwing, {J. M.} and Anderson, {N. G.} and Tischler, {M. A.}",
year = "1996",
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Light emission properties of GaN-based double heterostructures and quantum wells. / Loeber, D. A.S.; Redwing, J. M.; Anderson, N. G.; Tischler, M. A.

In: Materials Research Society Symposium - Proceedings, Vol. 395, 01.01.1996, p. 949-954.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Light emission properties of GaN-based double heterostructures and quantum wells

AU - Loeber, D. A.S.

AU - Redwing, J. M.

AU - Anderson, N. G.

AU - Tischler, M. A.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Edge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metallorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (approx.1 angstrom) modes which are evenly spaced by 10angstrom to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

AB - Edge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metallorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (approx.1 angstrom) modes which are evenly spaced by 10angstrom to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.

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