Liquid Phase Epitaxy (LPE) formation of localized high quality and mobility Ge & SiGe by high dose ge-implantation with laser melt annealing for 10nm and 7nm node CMOS technology

John Borland, Michiro Sugitani, Peter Oesterlin, Walt Johnson, Temel Buyuklimanli, Robert Hengstebeck, Ethan Kennon, Kevin Jones, Abhijeet Joshi

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Engineering & Materials Science