Abstract
Local electronic properties in AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometer- to micron-scale inhomogeneities in electronic structure to be elucidated. Substantial lateral variations in local threshold voltages for transistor channel formation are observed, at length scales ranging from submicron to >2 μm, and found to arise primarily from local variations in AlxGa1-xN layer thickness. Features in electronic structure are also observed that are consistent with the existence of networks of negatively charged threading edge dislocations, as might be formed at island coalescence boundaries during epitaxial growth. The negative charge associated with these structures appears to lead to local depletion of carriers from the channel in the AlxGa1-xN/GaN transistor epitaxial layer structure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 274-280 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 29 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1 2000 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy. / Smith, K. V.; Yu, E. T.; Redwing, Joan Marie; Boutros, K. S.
In: Journal of Electronic Materials, Vol. 29, No. 3, 01.01.2000, p. 274-280.Research output: Contribution to journal › Article
TY - JOUR
T1 - Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy
AU - Smith, K. V.
AU - Yu, E. T.
AU - Redwing, Joan Marie
AU - Boutros, K. S.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Local electronic properties in AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometer- to micron-scale inhomogeneities in electronic structure to be elucidated. Substantial lateral variations in local threshold voltages for transistor channel formation are observed, at length scales ranging from submicron to >2 μm, and found to arise primarily from local variations in AlxGa1-xN layer thickness. Features in electronic structure are also observed that are consistent with the existence of networks of negatively charged threading edge dislocations, as might be formed at island coalescence boundaries during epitaxial growth. The negative charge associated with these structures appears to lead to local depletion of carriers from the channel in the AlxGa1-xN/GaN transistor epitaxial layer structure.
AB - Local electronic properties in AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometer- to micron-scale inhomogeneities in electronic structure to be elucidated. Substantial lateral variations in local threshold voltages for transistor channel formation are observed, at length scales ranging from submicron to >2 μm, and found to arise primarily from local variations in AlxGa1-xN layer thickness. Features in electronic structure are also observed that are consistent with the existence of networks of negatively charged threading edge dislocations, as might be formed at island coalescence boundaries during epitaxial growth. The negative charge associated with these structures appears to lead to local depletion of carriers from the channel in the AlxGa1-xN/GaN transistor epitaxial layer structure.
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U2 - 10.1007/s11664-000-0062-z
DO - 10.1007/s11664-000-0062-z
M3 - Article
AN - SCOPUS:0033894185
VL - 29
SP - 274
EP - 280
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 3
ER -