Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Sukwon Choi, Benjamin A. Griffin

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

Original languageEnglish (US)
Article number025009
JournalJournal of Micromechanics and Microengineering
Volume26
Issue number2
DOIs
StatePublished - Jan 6 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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