Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Sukwon Choi, Benjamin A. Griffin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

Original languageEnglish (US)
Article number025009
JournalJournal of Micromechanics and Microengineering
Volume26
Issue number2
DOIs
StatePublished - Jan 6 2016

Fingerprint

Aluminum nitride
MEMS
Raman spectroscopy
Residual stresses
Monitoring
Metals
Electrodes
Laser excitation
Metallizing
Silicon Dioxide
aluminum nitride
Silica

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

@article{f16cdb002bc3440e973fa0cb384479c4,
title = "Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy",
abstract = "Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.",
author = "Sukwon Choi and Griffin, {Benjamin A.}",
year = "2016",
month = "1",
day = "6",
doi = "10.1088/0960-1317/26/2/025009",
language = "English (US)",
volume = "26",
journal = "Journal of Micromechanics and Microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
number = "2",

}

Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy. / Choi, Sukwon; Griffin, Benjamin A.

In: Journal of Micromechanics and Microengineering, Vol. 26, No. 2, 025009, 06.01.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

AU - Choi, Sukwon

AU - Griffin, Benjamin A.

PY - 2016/1/6

Y1 - 2016/1/6

N2 - Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

AB - Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

UR - http://www.scopus.com/inward/record.url?scp=84960155882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960155882&partnerID=8YFLogxK

U2 - 10.1088/0960-1317/26/2/025009

DO - 10.1088/0960-1317/26/2/025009

M3 - Article

VL - 26

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

SN - 0960-1317

IS - 2

M1 - 025009

ER -