UA tight-binding Hamiltonian is used to study the electronic properties of covalently bonded, crossed (5,5) metallic nanotubes with an increasing degree of disorder in the junction region. Ideal junctions with a few topological defects show Ohmic behavior. Upon increasing disorder, Ohmic conduction is suppressed in favor of hopping conductivity. Strongly disordered junctions as could be obtained after electron-beam irradiation of overlayed nanotubes, display weak localization and energy quantization, indicating the formation of a quantum dot contacted to metallic nanowires by tunnel barriers.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Mar 25 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics