Localization in single-walled carbon nanotubes

M. S. Fuhrer, Marvin L. Cohen, A. Zettl, Vincent Crespi

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.

Original languageEnglish (US)
Pages (from-to)105-109
Number of pages5
JournalSolid State Communications
Volume109
Issue number2
DOIs
StatePublished - Dec 14 1998

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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