Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

Dong Hui Xu, Jin Hua Gao, Chao Xing Liu, Jin Hua Sun, Fu Chun Zhang, Yi Zhou

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.

Original languageEnglish (US)
Article number195104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number19
DOIs
StatePublished - May 7 2014

Fingerprint

Spin Hall effect
Quantum Hall effect
Semiconductor quantum wells
Hall effect
Doping (additives)
quantum wells
plateaus
Scattering
Impurities
impurities
scattering
Experiments
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.",
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Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. / Xu, Dong Hui; Gao, Jin Hua; Liu, Chao Xing; Sun, Jin Hua; Zhang, Fu Chun; Zhou, Yi.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 19, 195104, 07.05.2014.

Research output: Contribution to journalArticle

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AU - Gao, Jin Hua

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AU - Zhang, Fu Chun

AU - Zhou, Yi

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