Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

Dong Hui Xu, Jin Hua Gao, Chao Xing Liu, Jin Hua Sun, Fu Chun Zhang, Yi Zhou

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.

Original languageEnglish (US)
Article number195104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number19
DOIs
StatePublished - May 7 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells'. Together they form a unique fingerprint.

Cite this