We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - May 7 2014|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics