Localized states and resultant band bending in graphene antidot superlattices

Milan Begliarbekov, Onejae Sul, John Santanello, Nan Ai, Xi Zhang, Eui Hyeok Yang, Stefan Strauf

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically backgated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

Original languageEnglish (US)
Pages (from-to)1254-1258
Number of pages5
JournalNano letters
Volume11
Issue number3
DOIs
StatePublished - Mar 9 2011

Fingerprint

Graphite
Superlattices
Graphene
superlattices
graphene
Coloring Agents
Dyes
dyes
Fluorescence
fluorescence
Quenching
quenching
Electric fields
Doping (additives)
Molecules
electric fields
Electrons
molecules

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Begliarbekov, M., Sul, O., Santanello, J., Ai, N., Zhang, X., Yang, E. H., & Strauf, S. (2011). Localized states and resultant band bending in graphene antidot superlattices. Nano letters, 11(3), 1254-1258. https://doi.org/10.1021/nl1042648
Begliarbekov, Milan ; Sul, Onejae ; Santanello, John ; Ai, Nan ; Zhang, Xi ; Yang, Eui Hyeok ; Strauf, Stefan. / Localized states and resultant band bending in graphene antidot superlattices. In: Nano letters. 2011 ; Vol. 11, No. 3. pp. 1254-1258.
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Begliarbekov, M, Sul, O, Santanello, J, Ai, N, Zhang, X, Yang, EH & Strauf, S 2011, 'Localized states and resultant band bending in graphene antidot superlattices', Nano letters, vol. 11, no. 3, pp. 1254-1258. https://doi.org/10.1021/nl1042648

Localized states and resultant band bending in graphene antidot superlattices. / Begliarbekov, Milan; Sul, Onejae; Santanello, John; Ai, Nan; Zhang, Xi; Yang, Eui Hyeok; Strauf, Stefan.

In: Nano letters, Vol. 11, No. 3, 09.03.2011, p. 1254-1258.

Research output: Contribution to journalArticle

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AU - Strauf, Stefan

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Begliarbekov M, Sul O, Santanello J, Ai N, Zhang X, Yang EH et al. Localized states and resultant band bending in graphene antidot superlattices. Nano letters. 2011 Mar 9;11(3):1254-1258. https://doi.org/10.1021/nl1042648