Localized states and resultant band bending in graphene antidot superlattices

Milan Begliarbekov, Onejae Sul, John Santanello, Nan Ai, Xi Zhang, Eui Hyeok Yang, Stefan Strauf

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically backgated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

Original languageEnglish (US)
Pages (from-to)1254-1258
Number of pages5
JournalNano letters
Volume11
Issue number3
DOIs
StatePublished - Mar 9 2011

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Begliarbekov, M., Sul, O., Santanello, J., Ai, N., Zhang, X., Yang, E. H., & Strauf, S. (2011). Localized states and resultant band bending in graphene antidot superlattices. Nano letters, 11(3), 1254-1258. https://doi.org/10.1021/nl1042648