Locally defined quantum emission from epitaxial few-layer tungsten diselenide

Wei Wu, Chandriker K. Dass, Joshua R. Hendrickson, Raul D. Montaño, Robert E. Fischer, Xiaotian Zhang, Tanushree H. Choudhury, Joan M. Redwing, Yongqiang Wang, Michael T. Pettes

Research output: Contribution to journalArticle

Abstract

Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750-800 nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 μm. We use bending based on the small radius of these tips - on the order of 4 nm - to impart electronic localization effects through morphology alone, as the WSe2 film experiences a uniform SiO2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe2 film was transferred onto an array of SiO2 tips, an ∼87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelines for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.

Original languageEnglish (US)
Article number213102
JournalApplied Physics Letters
Volume114
Issue number21
DOIs
StatePublished - May 27 2019

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tungsten
gaseous diffusion
photons
electronics
point defects
vapor deposition
photonics
silicon dioxide
electronic structure
radii
defects
geometry
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, W., Dass, C. K., Hendrickson, J. R., Montaño, R. D., Fischer, R. E., Zhang, X., ... Pettes, M. T. (2019). Locally defined quantum emission from epitaxial few-layer tungsten diselenide. Applied Physics Letters, 114(21), [213102]. https://doi.org/10.1063/1.5091779
Wu, Wei ; Dass, Chandriker K. ; Hendrickson, Joshua R. ; Montaño, Raul D. ; Fischer, Robert E. ; Zhang, Xiaotian ; Choudhury, Tanushree H. ; Redwing, Joan M. ; Wang, Yongqiang ; Pettes, Michael T. / Locally defined quantum emission from epitaxial few-layer tungsten diselenide. In: Applied Physics Letters. 2019 ; Vol. 114, No. 21.
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Wu, W, Dass, CK, Hendrickson, JR, Montaño, RD, Fischer, RE, Zhang, X, Choudhury, TH, Redwing, JM, Wang, Y & Pettes, MT 2019, 'Locally defined quantum emission from epitaxial few-layer tungsten diselenide', Applied Physics Letters, vol. 114, no. 21, 213102. https://doi.org/10.1063/1.5091779

Locally defined quantum emission from epitaxial few-layer tungsten diselenide. / Wu, Wei; Dass, Chandriker K.; Hendrickson, Joshua R.; Montaño, Raul D.; Fischer, Robert E.; Zhang, Xiaotian; Choudhury, Tanushree H.; Redwing, Joan M.; Wang, Yongqiang; Pettes, Michael T.

In: Applied Physics Letters, Vol. 114, No. 21, 213102, 27.05.2019.

Research output: Contribution to journalArticle

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AU - Zhang, Xiaotian

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AU - Redwing, Joan M.

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AU - Pettes, Michael T.

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Wu W, Dass CK, Hendrickson JR, Montaño RD, Fischer RE, Zhang X et al. Locally defined quantum emission from epitaxial few-layer tungsten diselenide. Applied Physics Letters. 2019 May 27;114(21). 213102. https://doi.org/10.1063/1.5091779