Abstract
We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.
Original language | English (US) |
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Title of host publication | 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual |
Pages | 503-510 |
Number of pages | 8 |
DOIs | |
State | Published - Sep 25 2007 |
Event | 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States Duration: Apr 15 2007 → Apr 19 2007 |
Other
Other | 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS |
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Country/Territory | United States |
City | Phoenix, AZ |
Period | 4/15/07 → 4/19/07 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality