Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs

J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.

Original languageEnglish (US)
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages503-510
Number of pages8
DOIs
StatePublished - Sep 25 2007
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: Apr 15 2007Apr 19 2007

Other

Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/15/074/19/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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