Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs

J. P. Campbell; Patrick M. Lenahan; A. T. Krishnan; S. Krishnan

doi:10.1109/RELPHY.2007.369942

Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs

J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Scopus citations

Abstract

We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO₂ and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond P_b0 and P_b1 defects observed in SiO₂-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced P_b0 and P_b1 defects in SiO₂-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as K_N for NBTI.

Original language	English (US)
Title of host publication	2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages	503-510
Number of pages	8
DOIs	https://doi.org/10.1109/RELPHY.2007.369942
State	Published - Sep 25 2007
Event	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States Duration: Apr 15 2007 → Apr 19 2007

Other

Other	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Country	United States
City	Phoenix, AZ
Period	4/15/07 → 4/19/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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@inproceedings{3076dbdf87494b22b53b86671eb4ef03,

title = "Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs",

abstract = "We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.",

author = "Campbell, {J. P.} and Lenahan, {Patrick M.} and Krishnan, {A. T.} and S. Krishnan",

year = "2007",

month = sep,

day = "25",

doi = "10.1109/RELPHY.2007.369942",

language = "English (US)",

isbn = "1424409195",

pages = "503--510",

booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",

note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",

}

Campbell, JP, Lenahan, PM, Krishnan, AT & Krishnan, S 2007, Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs. in 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual., 4227683, pp. 503-510, 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS, Phoenix, AZ, United States, 4/15/07. https://doi.org/10.1109/RELPHY.2007.369942

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T1 - Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs

AU - Campbell, J. P.

AU - Lenahan, Patrick M.

AU - Krishnan, A. T.

AU - Krishnan, S.

PY - 2007/9/25

Y1 - 2007/9/25

N2 - We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.

AB - We utilize a combination of DC-IV measurements and very sensitive electrically-detected electron spin resonance measurements called spin-dependent recombination to observe NBTI-induced defect centers in SiO2 and plasma nitrided oxide (PNO)-based pMOSFETs. We present strong spectroscopic evidence that the dominating NBTI-induced defect observed in PNO-based devices is physically different than the Si/dielectric interface silicon dangling bond Pb0 and Pb1 defects observed in SiO2-based devices. Our observations strongly indicate that the NBTI-induced defects in the PNO-based devices are located in the near interfacial region, within the dielectric. It is also likely that these defects exhibit a far narrower density of states than the NBTI-induced Pb0 and Pb1 defects in SiO2-based devices. We tentatively assign the NBTI-induced defect in the PNO devices as KN for NBTI.

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