Long range interaction between a He atom and a semiconductor surface

G. Vidali, Milton Walter Cole

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

Original languageEnglish (US)
JournalSurface Science Letters
Volume107
Issue number2-3
DOIs
StatePublished - Jun 1 1981

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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