Long range interaction between a He atom and a semiconductor surface

G. Vidali, Milton Walter Cole

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

Original languageEnglish (US)
JournalSurface Science Letters
Volume107
Issue number2-3
DOIs
StatePublished - Jun 1 1981

Fingerprint

Diamond
Beam plasma interactions
Diamonds
diamonds
Semiconductor materials
Atoms
atoms
interactions
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Vidali, G. ; Cole, Milton Walter. / Long range interaction between a He atom and a semiconductor surface. In: Surface Science Letters. 1981 ; Vol. 107, No. 2-3.
@article{0b801e510c5c4d49bf379cb8b3c2de0b,
title = "Long range interaction between a He atom and a semiconductor surface",
abstract = "The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.",
author = "G. Vidali and Cole, {Milton Walter}",
year = "1981",
month = "6",
day = "1",
doi = "10.1016/0167-2584(81)90245-0",
language = "English (US)",
volume = "107",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "2-3",

}

Long range interaction between a He atom and a semiconductor surface. / Vidali, G.; Cole, Milton Walter.

In: Surface Science Letters, Vol. 107, No. 2-3, 01.06.1981.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Long range interaction between a He atom and a semiconductor surface

AU - Vidali, G.

AU - Cole, Milton Walter

PY - 1981/6/1

Y1 - 1981/6/1

N2 - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

AB - The dispersion interaction between a He atom and a solid has the form V ∼ -C3z-3 at large distance. We calculate the value of C3 for several cases (Ge, Si, GaAs, and diamond) using experimental results for ∈2(ω). The model dielectric function of Breckenridge, Shaw and Sher is found to yield good agreement with the value of C3 obtained from experimental data.

UR - http://www.scopus.com/inward/record.url?scp=24244439438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24244439438&partnerID=8YFLogxK

U2 - 10.1016/0167-2584(81)90245-0

DO - 10.1016/0167-2584(81)90245-0

M3 - Article

AN - SCOPUS:24244439438

VL - 107

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 2-3

ER -