Long time-constant trap effects in nitride heterostructure field effect transistors

X. Dang, P. M. Asbeck, E. T. Yu, K. S. Boutros, Joan Marie Redwing

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume622
StatePublished - 2000

Fingerprint

High electron mobility transistors
Bias voltage
Nitrides
time constant
nitrides
field effect transistors
traps
Threshold voltage
Surface treatment
Etching
time lag
electric potential
surface treatment
threshold voltage
etching

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.",
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journal = "Materials Research Society Symposium - Proceedings",
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Long time-constant trap effects in nitride heterostructure field effect transistors. / Dang, X.; Asbeck, P. M.; Yu, E. T.; Boutros, K. S.; Redwing, Joan Marie.

In: Materials Research Society Symposium - Proceedings, Vol. 622, 2000.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Long time-constant trap effects in nitride heterostructure field effect transistors

AU - Dang, X.

AU - Asbeck, P. M.

AU - Yu, E. T.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

PY - 2000

Y1 - 2000

N2 - Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.

AB - Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.

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M3 - Article

VL - 622

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

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