Long time-constant trap effects in nitride heterostructure field effect transistors

Xiaozhong Dang, Peter M. Asbeck, Edward T. Yu, Karim S. Boutros, Joan M. Redwing

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etching and the influence of pulsed bias conditions on threshold voltage are investigated to explore the origins of traps associated with each current transient component.

Original languageEnglish (US)
Pages (from-to)T6281-T6286
JournalMaterials Research Society Symposium-Proceedings
Volume622
DOIs
StatePublished - 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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