Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET

Yajing Zhang, Trillion Q. Zheng, Yan Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. Finally a 200W GaN FET based flyback-forward high gain DC/DC converter is established, experiment results verified that the GaN FET is superior to the silicon MOSFET in switching characteristic and efficiency.

Original languageEnglish (US)
Title of host publication2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PublisherIEEE Computer Society
Pages2899-2903
Number of pages5
ISBN (Print)9781479927050
DOIs
StatePublished - Jan 1 2014
Event7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
Duration: May 18 2014May 21 2014

Publication series

Name2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Conference

Conference7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
CountryJapan
CityHiroshima
Period5/18/145/21/14

Fingerprint

DC-DC converters
Field effect transistors
Soft switching (power electronics)
Electric properties
Thermodynamic properties
Silicon
Mechanical properties
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Zhang, Y., Zheng, T. Q., & Li, Y. (2014). Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 (pp. 2899-2903). [6870093] (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). IEEE Computer Society. https://doi.org/10.1109/IPEC.2014.6870093
Zhang, Yajing ; Zheng, Trillion Q. ; Li, Yan. / Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET. 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. pp. 2899-2903 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).
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abstract = "Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. Finally a 200W GaN FET based flyback-forward high gain DC/DC converter is established, experiment results verified that the GaN FET is superior to the silicon MOSFET in switching characteristic and efficiency.",
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Zhang, Y, Zheng, TQ & Li, Y 2014, Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET. in 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014., 6870093, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE Computer Society, pp. 2899-2903, 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 5/18/14. https://doi.org/10.1109/IPEC.2014.6870093

Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET. / Zhang, Yajing; Zheng, Trillion Q.; Li, Yan.

2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. p. 2899-2903 6870093 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Compared with Si MOSFET, the GaN FET devices have advantages in the electrical characteristics, thermal properties and mechanical properties. This paper compares electrical properties of the GaN FET and Si MOSFET. Evaluation of the GaN FET based on flyback-forward high gain DC/DC converter at soft-switching condition are presented in detail. In addition, the power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. Finally a 200W GaN FET based flyback-forward high gain DC/DC converter is established, experiment results verified that the GaN FET is superior to the silicon MOSFET in switching characteristic and efficiency.

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Zhang Y, Zheng TQ, Li Y. Loss analysis and soft-switching characteristics of flyback-forward high gain DC/DC converter with GaN FET. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society. 2014. p. 2899-2903. 6870093. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). https://doi.org/10.1109/IPEC.2014.6870093