Low-energy hydrogen implantation for silicon Schottky barrier modification

S Ashok, SA Ringel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

Original languageEnglish (US)
Pages (from-to)917-920
Number of pages4
JournalVacuum
Volume36
Issue number11-12
DOIs
StatePublished - Jan 1 1986

Fingerprint

Silicon
Hydrogen
implantation
Doping (additives)
silicon
hydrogen
Noble Gases
Dry etching
Ion bombardment
Inert gases
Ion implantation
ion implantation
energy
bombardment
rare gases
ions
etching
Ions
Crystalline materials
damage

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ashok, S ; Ringel, SA. / Low-energy hydrogen implantation for silicon Schottky barrier modification. In: Vacuum. 1986 ; Vol. 36, No. 11-12. pp. 917-920.
@article{bb1a99e9d69446f59033b95d3b14bb45,
title = "Low-energy hydrogen implantation for silicon Schottky barrier modification",
abstract = "Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.",
author = "S Ashok and SA Ringel",
year = "1986",
month = "1",
day = "1",
doi = "10.1016/0042-207X(86)90140-5",
language = "English (US)",
volume = "36",
pages = "917--920",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "11-12",

}

Low-energy hydrogen implantation for silicon Schottky barrier modification. / Ashok, S; Ringel, SA.

In: Vacuum, Vol. 36, No. 11-12, 01.01.1986, p. 917-920.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-energy hydrogen implantation for silicon Schottky barrier modification

AU - Ashok, S

AU - Ringel, SA

PY - 1986/1/1

Y1 - 1986/1/1

N2 - Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

AB - Low-energy (≲0.4 keV) atomic hydrogen has been found to passivate defects created in Si by ion bombardment as under dopant ion implantation or ion-assisted dry etching. The interaction of atomic hydrogen with crystalline Si is, however, more intricate involving also further surface damage and formation of complexes with dopant atoms. The application of hydrogen implant following dopant and inert gas implants for Schottky barrier modification is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022818910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022818910&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(86)90140-5

DO - 10.1016/0042-207X(86)90140-5

M3 - Article

AN - SCOPUS:0022818910

VL - 36

SP - 917

EP - 920

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 11-12

ER -