Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors

K. Sarpatwari, O. O. Awadelkarim, L. J. Passmore, T. T. Ho, M. W. Kuo, N. S. Dellas, T. S. Mayer, S. E. Mohney

Research output: Contribution to journalArticle

Abstract

We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

Original languageEnglish (US)
Article number5604321
Pages (from-to)871-874
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume10
Issue number4
DOIs
StatePublished - Jul 1 2011

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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