Low-k dielectric obtained by noble gas implantation in silicon oxide

H. Assaf, E. Ntsoenzok, M. O. Ruault, S. Ashok

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Abstract

Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm 2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO 2 layer for the dose of 1×10 16Xe/cm 2. But for the higher doses of 3.5 and 5×10 16Xe/cm 2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume914
StatePublished - Oct 17 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 21 2006

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Assaf, H., Ntsoenzok, E., Ruault, M. O., & Ashok, S. (2006). Low-k dielectric obtained by noble gas implantation in silicon oxide. Materials Research Society Symposium Proceedings, 914, 439-444.