Low-k dielectric obtained by noble gas implantation in silicon oxide

H. Assaf, E. Ntsoenzok, M. O. Ruault, S Ashok

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm 2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO 2 layer for the dose of 1×10 16Xe/cm 2. But for the higher doses of 3.5 and 5×10 16Xe/cm 2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume914
StatePublished - Oct 17 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 21 2006

Fingerprint

Noble Gases
Silicon oxides
Inert gases
silicon oxides
rare gases
implantation
Annealing
dosage
Capacitance measurement
bubbles
Permittivity
annealing
capacitance
permittivity
Temperature
Low-k dielectric
room temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Assaf, H., Ntsoenzok, E., Ruault, M. O., & Ashok, S. (2006). Low-k dielectric obtained by noble gas implantation in silicon oxide. Materials Research Society Symposium Proceedings, 914, 439-444.
Assaf, H. ; Ntsoenzok, E. ; Ruault, M. O. ; Ashok, S. / Low-k dielectric obtained by noble gas implantation in silicon oxide. In: Materials Research Society Symposium Proceedings. 2006 ; Vol. 914. pp. 439-444.
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Assaf, H, Ntsoenzok, E, Ruault, MO & Ashok, S 2006, 'Low-k dielectric obtained by noble gas implantation in silicon oxide', Materials Research Society Symposium Proceedings, vol. 914, pp. 439-444.

Low-k dielectric obtained by noble gas implantation in silicon oxide. / Assaf, H.; Ntsoenzok, E.; Ruault, M. O.; Ashok, S.

In: Materials Research Society Symposium Proceedings, Vol. 914, 17.10.2006, p. 439-444.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Low-k dielectric obtained by noble gas implantation in silicon oxide

AU - Assaf, H.

AU - Ntsoenzok, E.

AU - Ruault, M. O.

AU - Ashok, S

PY - 2006/10/17

Y1 - 2006/10/17

N2 - Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm 2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO 2 layer for the dose of 1×10 16Xe/cm 2. But for the higher doses of 3.5 and 5×10 16Xe/cm 2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

AB - Thermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5×10 16Xe/cm 2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≥400°C results in the disappearance of bubbles from SiO 2 layer for the dose of 1×10 16Xe/cm 2. But for the higher doses of 3.5 and 5×10 16Xe/cm 2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO 2 sample from 4 (reference sample) to 1.5.

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M3 - Conference article

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