Abstract
Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.
| Original language | English (US) |
|---|---|
| Title of host publication | 75th Annual Device Research Conference, DRC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781509063277 |
| DOIs | |
| State | Published - Aug 1 2017 |
| Event | 75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: Jun 25 2017 → Jun 28 2017 |
Other
| Other | 75th Annual Device Research Conference, DRC 2017 |
|---|---|
| Country | United States |
| City | South Bend |
| Period | 6/25/17 → 6/28/17 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Low power current sense amplifier based on phase transition material. / Aziz, Ahmedullah; Li, Xueqing; Shukla, Nikhil; Datta, Suman; Chang, Meng Fan; Narayanan, Vijaykrishnan; Gupta, Sumeet Kumar.
75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999425.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Low power current sense amplifier based on phase transition material
AU - Aziz, Ahmedullah
AU - Li, Xueqing
AU - Shukla, Nikhil
AU - Datta, Suman
AU - Chang, Meng Fan
AU - Narayanan, Vijaykrishnan
AU - Gupta, Sumeet Kumar
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.
AB - Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.
UR - http://www.scopus.com/inward/record.url?scp=85028039219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028039219&partnerID=8YFLogxK
U2 - 10.1109/DRC.2017.7999425
DO - 10.1109/DRC.2017.7999425
M3 - Conference contribution
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -