Low power current sense amplifier based on phase transition material

Ahmedullah Aziz, Xueqing Li, Nikhil Shukla, Suman Datta, Meng Fan Chang, Vijaykrishnan Narayanan, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
DOIs
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Other

Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period6/25/176/28/17

Fingerprint

Phase transitions
Data storage equipment
Metal insulator transition
Field effect transistors
Neurons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Aziz, A., Li, X., Shukla, N., Datta, S., Chang, M. F., Narayanan, V., & Gupta, S. K. (2017). Low power current sense amplifier based on phase transition material. In 75th Annual Device Research Conference, DRC 2017 [7999425] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999425
Aziz, Ahmedullah ; Li, Xueqing ; Shukla, Nikhil ; Datta, Suman ; Chang, Meng Fan ; Narayanan, Vijaykrishnan ; Gupta, Sumeet Kumar. / Low power current sense amplifier based on phase transition material. 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017.
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Aziz, A, Li, X, Shukla, N, Datta, S, Chang, MF, Narayanan, V & Gupta, SK 2017, Low power current sense amplifier based on phase transition material. in 75th Annual Device Research Conference, DRC 2017., 7999425, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 6/25/17. https://doi.org/10.1109/DRC.2017.7999425

Low power current sense amplifier based on phase transition material. / Aziz, Ahmedullah; Li, Xueqing; Shukla, Nikhil; Datta, Suman; Chang, Meng Fan; Narayanan, Vijaykrishnan; Gupta, Sumeet Kumar.

75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999425.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Low power current sense amplifier based on phase transition material

AU - Aziz, Ahmedullah

AU - Li, Xueqing

AU - Shukla, Nikhil

AU - Datta, Suman

AU - Chang, Meng Fan

AU - Narayanan, Vijaykrishnan

AU - Gupta, Sumeet Kumar

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AB - Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.

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Aziz A, Li X, Shukla N, Datta S, Chang MF, Narayanan V et al. Low power current sense amplifier based on phase transition material. In 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7999425 https://doi.org/10.1109/DRC.2017.7999425