Low-power double-gate ZnO TFT active rectifier

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Abstract

This letter reports a low-power full-wave active rectifier using double-gate ZnO thin-film transistors (TFTs). The active rectifier is designed to operate at low voltage and low power to allow integration with mechanical energy harvesters. Double-gate TFTs allow the TFT threshold voltage to be tuned and enable enhancement/depletion-mode circuits with high gain and low power consumption. The active rectifier is designed to work with input voltage as small as 200-mV peak-to-peak and frequencies up to 4 Hz. The active rectifier circuit includes 12 TFTs and operates with a power consumption <150 nW. The low fabrication temperature for the active rectifier circuit allows direct and distributed integration with micro-electromechanical energy harvesters.

Original languageEnglish (US)
Article number7429683
Pages (from-to)426-428
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
StatePublished - Apr 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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