Low-power, high-speed Sb-based HEMTs and HBTs

R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, N. A. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, R. Bass, S. E. Mohney, S. Wang, J. Robinson, R. TsaiM. Barsky, M. D. Lange, A. Gutierrez

Research output: Contribution to conferencePaperpeer-review

Abstract

Several recent advances have been made in the development of a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) in the InAs, AlSb, and GaSb material system. Research has led to the development of the technology to manufacture AlSb/InAs HEMTS on a large scale. Along with this work, improvements have been made in the device operation. The power dissipation of the AlSb/InAs HEMTs has been found to be as little as one fifth that of an InAlAs/InGaAs HEMT operating at equivalent frequencies. An HBT with a p-type InGaSb base with a 0.5 eV bandgap has recently been made. The collector and emitter are made of n-type InAlAsSb alloys. The small bandgap of the base is an important ingredient in developing an HBT that operates at low bias, and therefore low power dissipation.

Original languageEnglish (US)
Pages191-204
Number of pages14
StatePublished - Oct 28 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 9 2004May 14 2004

Other

OtherState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/9/045/14/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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