Low power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs

V. Saripalli, D. K. Mohata, S. Mookerjea, S. Datta, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

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Engineering & Materials Science