Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs

P. D. Kirchner, Thomas Nelson Jackson, G. D. Pettit, J. M. Woodall

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space-charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm -3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n-GaAs. We attribute the large discrepancy between surface space-charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi-level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self-compensation.

Original languageEnglish (US)
Pages (from-to)26-28
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number1
DOIs
StatePublished - Dec 1 1985

Fingerprint

low resistance
molecular beams
electric contacts
space charge
depletion
site selection
electrical resistivity
silicon
arsenic
Fermi surfaces
stabilization
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kirchner, P. D. ; Jackson, Thomas Nelson ; Pettit, G. D. ; Woodall, J. M. / Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs. In: Applied Physics Letters. 1985 ; Vol. 47, No. 1. pp. 26-28.
@article{567e5a9ffc8040e19f19c126eb6cb90b,
title = "Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs",
abstract = "We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space-charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm -3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n-GaAs. We attribute the large discrepancy between surface space-charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi-level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self-compensation.",
author = "Kirchner, {P. D.} and Jackson, {Thomas Nelson} and Pettit, {G. D.} and Woodall, {J. M.}",
year = "1985",
month = "12",
day = "1",
doi = "10.1063/1.96391",
language = "English (US)",
volume = "47",
pages = "26--28",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs. / Kirchner, P. D.; Jackson, Thomas Nelson; Pettit, G. D.; Woodall, J. M.

In: Applied Physics Letters, Vol. 47, No. 1, 01.12.1985, p. 26-28.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs

AU - Kirchner, P. D.

AU - Jackson, Thomas Nelson

AU - Pettit, G. D.

AU - Woodall, J. M.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space-charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm -3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n-GaAs. We attribute the large discrepancy between surface space-charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi-level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self-compensation.

AB - We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space-charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm -3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n-GaAs. We attribute the large discrepancy between surface space-charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi-level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self-compensation.

UR - http://www.scopus.com/inward/record.url?scp=0001988459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001988459&partnerID=8YFLogxK

U2 - 10.1063/1.96391

DO - 10.1063/1.96391

M3 - Article

AN - SCOPUS:0001988459

VL - 47

SP - 26

EP - 28

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -