Low sintering temperature of CuO-fiuxed Ag(Nb, Ta)O 3 dielectric ceramics

Chiping Wang, Thomas R. Shrout, Gaiying Yang, Hyo Tae Kim, Do Kyun Kwon, Michael T. Lanagan

Research output: Contribution to journalArticle

Abstract

Solid solutions in the Ag(Nb xTa 1-x)O 3 (where 0 ≤ x ≤ 1) system exhibit excellent dielectric properties at microwave frequency including high dielectric constant (200<k<400), low loss (tanδ -0.004) and a composition controlled temperature coefficient of capacitance (TCC). For Ta-rich and Nb-rich solid solutions, the TCC values are negative and positive, respectively, and two-phase mixtures provided an average TCC close to zero. Series, parallel, and logarithmic mixing rules were applied to predict dielectric constant and TCC of polyphase assemblages (45wt%Ag(Nb 0.65Ta 0.35)O 3+55wt% Ag(Nb 0.35Ta 0.65)O 3) yielded an average dielectric constant of 450 and a TCC of 180ppm/°C. Microstructure analysis revealed that a CuO-rich liquid remains at the grain boundary and transmission electron microscopy shows that the CuO resides at triple points. Ag(Nb xTa 1-x)O 3 ceramics were successfully integrated into LTCC for embedded capacitors. The addition of CuO lowered the sintering temperature to below 900°C and a low TCC was maintained for fine grained microstructures.

Original languageEnglish (US)
Pages (from-to)3-11
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume783
StatePublished - 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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