Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

S. S.N. Bharadwaja; C. Venkatasubramanian; N. Fieldhouse; S. Ashok; M. W. Horn; T. N. Jackson

doi:10.1063/1.3139864

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

S. S.N. Bharadwaja, C. Venkatasubramanian, N. Fieldhouse, S. Ashok, M. W. Horn, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

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Abstract

Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ (T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

Original language	English (US)
Article number	222110
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3139864
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3139864

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title = "Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering",

abstract = "Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ (T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.",

author = "Bharadwaja, {S. S.N.} and C. Venkatasubramanian and N. Fieldhouse and S. Ashok and Horn, {M. W.} and Jackson, {T. N.}",

note = "Funding Information: This research work was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory under Cooperative Agreement No. W911NF-0-2-0026. The authors sincerely acknowledge Dr. Alexey Kovalev{\textquoteright}s (PSU) assistance for low temperature measurements. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

doi = "10.1063/1.3139864",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

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AU - Bharadwaja, S. S.N.

AU - Venkatasubramanian, C.

AU - Fieldhouse, N.

AU - Ashok, S.

AU - Horn, M. W.

AU - Jackson, T. N.

N1 - Funding Information: This research work was sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory under Cooperative Agreement No. W911NF-0-2-0026. The authors sincerely acknowledge Dr. Alexey Kovalev’s (PSU) assistance for low temperature measurements. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ (T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

AB - Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ (T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

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Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

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