Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

S. S.N. Bharadwaja, C. Venkatasubramanian, N. Fieldhouse, S. Ashok, M. W. Horn, T. N. Jackson

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ (T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

Original languageEnglish (US)
Article number222110
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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