Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

Min Gyu Kang, Kwang Hwan Cho, Seung Min Oh, Young Ho Do, Chong Yun Kang, Sangsig Kim, Seok Jin Yoon

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

(Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 °C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 °C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 °C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 μA/cm2 below 300 °C.

Original languageEnglish (US)
Pages (from-to)S66-S69
JournalCurrent Applied Physics
Volume11
Issue number3 SUPPL.
DOIs
StatePublished - May 1 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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