Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive

Min-Gyu Kang, Seung Min Oh, Kwang Hwan Cho, Young Ho Do, Dong Soo Paik, Bong Hee Cho, Chong Yun Kang, Sahn Nahm, Seok Jin Yoon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Low-temperature-crystallized PbZr 0.52Ti 0.48O 3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450°C, and remarkable electrical properties such as a remnant polarization of 4.3 μCcm 2, a coercive field of 49.3 kVcm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5 were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume159
Issue number1
DOIs
StatePublished - Feb 29 2012

Fingerprint

Vanadium
Crystallization
Sol-gels
Thin films
Ferroelectric devices
Temperature
Dielectric losses
Grain growth
Perovskite
Oxides
Sol-gel process
Melting point
Electric properties
Permittivity
Annealing
Polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kang, Min-Gyu ; Oh, Seung Min ; Cho, Kwang Hwan ; Do, Young Ho ; Paik, Dong Soo ; Cho, Bong Hee ; Kang, Chong Yun ; Nahm, Sahn ; Yoon, Seok Jin. / Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive. In: Journal of the Electrochemical Society. 2012 ; Vol. 159, No. 1.
@article{d99c5295dda14a46a7bd4b15c05bf1f3,
title = "Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive",
abstract = "Low-temperature-crystallized PbZr 0.52Ti 0.48O 3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450°C, and remarkable electrical properties such as a remnant polarization of 4.3 μCcm 2, a coercive field of 49.3 kVcm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5 were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.",
author = "Min-Gyu Kang and Oh, {Seung Min} and Cho, {Kwang Hwan} and Do, {Young Ho} and Paik, {Dong Soo} and Cho, {Bong Hee} and Kang, {Chong Yun} and Sahn Nahm and Yoon, {Seok Jin}",
year = "2012",
month = "2",
day = "29",
doi = "10.1149/2.018201jes",
language = "English (US)",
volume = "159",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive. / Kang, Min-Gyu; Oh, Seung Min; Cho, Kwang Hwan; Do, Young Ho; Paik, Dong Soo; Cho, Bong Hee; Kang, Chong Yun; Nahm, Sahn; Yoon, Seok Jin.

In: Journal of the Electrochemical Society, Vol. 159, No. 1, 29.02.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature crystallization of sol-gel derived PbZr 0.52Ti 0.48O 3 thin films with a vanadium additive

AU - Kang, Min-Gyu

AU - Oh, Seung Min

AU - Cho, Kwang Hwan

AU - Do, Young Ho

AU - Paik, Dong Soo

AU - Cho, Bong Hee

AU - Kang, Chong Yun

AU - Nahm, Sahn

AU - Yoon, Seok Jin

PY - 2012/2/29

Y1 - 2012/2/29

N2 - Low-temperature-crystallized PbZr 0.52Ti 0.48O 3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450°C, and remarkable electrical properties such as a remnant polarization of 4.3 μCcm 2, a coercive field of 49.3 kVcm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5 were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.

AB - Low-temperature-crystallized PbZr 0.52Ti 0.48O 3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450°C, and remarkable electrical properties such as a remnant polarization of 4.3 μCcm 2, a coercive field of 49.3 kVcm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5 were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.

UR - http://www.scopus.com/inward/record.url?scp=84857431755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857431755&partnerID=8YFLogxK

U2 - 10.1149/2.018201jes

DO - 10.1149/2.018201jes

M3 - Article

VL - 159

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -