Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Jian Gong Cheng, Junling Wang, Tanawadee Dechakupt, Susan Trolier-McKinstry

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible.

Original languageEnglish (US)
Article number232905
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
StatePublished - Dec 12 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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