Low-temperature dielectric relaxation in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound

Chen Ang, Zhi Yu, H. J. Youn, C. A. Randall, A. S. Bhalla, L. E. Cross, J. Nino, M. Lanagan

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Abstract

The dielectric behavior of the pyrochlore (Bi3/4Zn 1/4)2(Zn1/4Ta3/4)2O 7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε=∼60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 102 to ∼1010Hz. The temperature intensity of dielectric peaks are independent of dc bias (≤60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the "seventh oxygen" and the Bi/Zn A-site ions in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound.

Original languageEnglish (US)
Pages (from-to)4807-4809
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number25
DOIs
StatePublished - Jun 24 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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