Low Temperature Ionic Conductivity of an Acceptor-Doped Perovskite

II. Impedance of Single-Crystal BaTiO3

Russell A. Maier, Clive A. Randall, J. Stevenson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Low temperature conductivity mechanisms were identified in acceptor-doped BaTiO3 single crystals equilibrated and quenched from high temperature under different oxygen partial pressures. A range of acceptor ionization states were quenched into samples doped with manganese or iron. Using an appropriate equivalent circuit to interpret impedance spectroscopy data, room temperature conductivity mechanisms in the single crystal samples were identified, and the permittivity/temperature dependence was also shown to be self-consistent with the nature of a first-order ferroelectric phase transition. The primary, low temperature, conduction mechanism in acceptor-doped BaTiO3 was determined to be dominated by the migration of oxygen vacancies. The activation energy for oxygen vacancy migration was experimentally determined to have a value of nearly 0.7 eV. This activation energy represents an intrinsic value for vacancy hopping and confirms our previous work that revealed minimal interaction between acceptor dopants and oxygen vacancies in BaTiO3 in contrast to the well-documented evidence of defect association in SrTiO3.

Original languageEnglish (US)
Pages (from-to)3360-3366
Number of pages7
JournalJournal of the American Ceramic Society
Volume99
Issue number10
DOIs
StatePublished - Oct 1 2016

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Ionic conductivity
Perovskite
Single crystals
Oxygen vacancies
Temperature
Activation energy
Manganese
Equivalent circuits
Partial pressure
Ferroelectric materials
Vacancies
Ionization
Permittivity
Iron
Phase transitions
Doping (additives)
perovskite
Association reactions
Spectroscopy
Oxygen

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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abstract = "Low temperature conductivity mechanisms were identified in acceptor-doped BaTiO3 single crystals equilibrated and quenched from high temperature under different oxygen partial pressures. A range of acceptor ionization states were quenched into samples doped with manganese or iron. Using an appropriate equivalent circuit to interpret impedance spectroscopy data, room temperature conductivity mechanisms in the single crystal samples were identified, and the permittivity/temperature dependence was also shown to be self-consistent with the nature of a first-order ferroelectric phase transition. The primary, low temperature, conduction mechanism in acceptor-doped BaTiO3 was determined to be dominated by the migration of oxygen vacancies. The activation energy for oxygen vacancy migration was experimentally determined to have a value of nearly 0.7 eV. This activation energy represents an intrinsic value for vacancy hopping and confirms our previous work that revealed minimal interaction between acceptor dopants and oxygen vacancies in BaTiO3 in contrast to the well-documented evidence of defect association in SrTiO3.",
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Low Temperature Ionic Conductivity of an Acceptor-Doped Perovskite : II. Impedance of Single-Crystal BaTiO3. / Maier, Russell A.; Randall, Clive A.; Stevenson, J.

In: Journal of the American Ceramic Society, Vol. 99, No. 10, 01.10.2016, p. 3360-3366.

Research output: Contribution to journalArticle

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