Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

A. Behnam, F. Karbassian, S. Mohajerzadeh, Seyedehaida Ebrahimi, M. D. Robertson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.

Original languageEnglish (US)
Pages (from-to)1618-1624
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
StatePublished - Sep 1 2006

Fingerprint

Silicon
Crystallization
Nickel
Hydrogenation
hydrogenation
nickel
crystallization
silicon
plastics
Plastics
Tensile strain
Electron mobility
Substrates
Thin film transistors
electron mobility
Temperature
Structural properties
crystallinity
transistors
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Behnam, A. ; Karbassian, F. ; Mohajerzadeh, S. ; Ebrahimi, Seyedehaida ; Robertson, M. D. / Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress. In: Solid-State Electronics. 2006 ; Vol. 50, No. 9-10. pp. 1618-1624.
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Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress. / Behnam, A.; Karbassian, F.; Mohajerzadeh, S.; Ebrahimi, Seyedehaida; Robertson, M. D.

In: Solid-State Electronics, Vol. 50, No. 9-10, 01.09.2006, p. 1618-1624.

Research output: Contribution to journalArticle

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AU - Karbassian, F.

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AU - Robertson, M. D.

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