Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress

A. Behnam, F. Karbassian, S. Mohajerzadeh, A. Ebrahimi, M. D. Robertson

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopy where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4%. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/V s.

Original languageEnglish (US)
Pages (from-to)1618-1624
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number9-10
DOIs
StatePublished - Sep 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Low-temperature nickel-induced nano-crystallization of silicon on PET by MIC, hydrogenation and mechanical stress'. Together they form a unique fingerprint.

Cite this