Low-temperature pulsed-PECVD ZnO thin-film transistors

Dalong Zhao, Devin A. Mourey, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We report high-quality ZnO thin films deposited at low temperature (200°C) by pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD). Process byproducts are purged by weak oxidants N 2O or CO 2 to minimize parasitic CVD deposition, resulting in high-refractive-index thin films. Pulsed-PECVD-deposited ZnO thin-film transistors were fabricated on plasma-enhanced atomic layer deposition (PEALD) Al 2O 3 dielectric and have a field-effect mobility of 15 cm 2/V s, subthreshold slope of 370 mV/dec, threshold voltage of 6.6 V, and current on/off ratio of 10 8. Thin-film transistors (TFTs) on thermal SiO 2 dielectric have a field-effect mobility of 7.5 cm 2/V s and threshold voltage of 14 V. For these devices, performance may be limited by the interface between the ZnO and the dielectric.

Original languageEnglish (US)
Pages (from-to)554-558
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
StatePublished - May 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Low-temperature pulsed-PECVD ZnO thin-film transistors'. Together they form a unique fingerprint.

Cite this