Low-voltage double-gate ZnO thin-film transistor circuits

Yuanyuan V. Li, Jose Israel Ramirez, Kaige G. Sun, Thomas Nelson Jackson

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

Original languageEnglish (US)
Article number6530657
Pages (from-to)891-893
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number7
DOIs
StatePublished - 2013

Fingerprint

Thin film transistors
Networks (circuits)
Electric potential
Atomic layer deposition
Threshold voltage
Plasmas

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Li, Yuanyuan V. ; Ramirez, Jose Israel ; Sun, Kaige G. ; Jackson, Thomas Nelson. / Low-voltage double-gate ZnO thin-film transistor circuits. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 7. pp. 891-893.
@article{9596e98bded74d1f80fbfa1c9ab2c7ae,
title = "Low-voltage double-gate ZnO thin-film transistor circuits",
abstract = "In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.",
author = "Li, {Yuanyuan V.} and Ramirez, {Jose Israel} and Sun, {Kaige G.} and Jackson, {Thomas Nelson}",
year = "2013",
doi = "10.1109/LED.2013.2263193",
language = "English (US)",
volume = "34",
pages = "891--893",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

Low-voltage double-gate ZnO thin-film transistor circuits. / Li, Yuanyuan V.; Ramirez, Jose Israel; Sun, Kaige G.; Jackson, Thomas Nelson.

In: IEEE Electron Device Letters, Vol. 34, No. 7, 6530657, 2013, p. 891-893.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-voltage double-gate ZnO thin-film transistor circuits

AU - Li, Yuanyuan V.

AU - Ramirez, Jose Israel

AU - Sun, Kaige G.

AU - Jackson, Thomas Nelson

PY - 2013

Y1 - 2013

N2 - In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

AB - In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

UR - http://www.scopus.com/inward/record.url?scp=84880049000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880049000&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2263193

DO - 10.1109/LED.2013.2263193

M3 - Article

VL - 34

SP - 891

EP - 893

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

M1 - 6530657

ER -