Low-voltage double-gate ZnO thin-film transistor circuits

Yuanyuan V. Li, Jose Israel Ramirez, Kaige G. Sun, Thomas N. Jackson

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain > 100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

Original languageEnglish (US)
Article number6530657
Pages (from-to)891-893
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number7
DOIs
StatePublished - Jun 17 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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