Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak, Francisco Tito Ayguavives, Jon Paul Maria, Gregory T. Stauf, Angus I. Kingon, Amir Mortazawi

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

Original languageEnglish (US)
Pages (from-to)1345-1348
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
DOIs
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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