In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - Jan 1 2000|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering