Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications

Ali Tombak, Francisco Tito Ayguavives, Jon Paul Maria, Gregory T. Stauf, Angus I. Kingon, Amir Mortazawi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC applied, MOCVD BST parallel plate capacitors yielded 60% (2.4:1) tunability between 45 MHz and 200 MHz. In this frequency range, the dielectric loss tangent was typically 0.004. Measured results for the frequency dependent dielectric permittivity and tunability at large RF voltage amplitudes are presented.

Original languageEnglish (US)
Pages (from-to)1345-1348
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
DOIs
StatePublished - Jan 1 2000

Fingerprint

Barium strontium titanate
strontium
low voltage
barium
capacitors
Capacitors
Microwaves
microwaves
Metallorganic chemical vapor deposition
Electric potential
Dielectric losses
thin films
parallel plates
tangents
dielectric loss
metalorganic chemical vapor deposition
Permittivity
frequency ranges
direct current
permittivity

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Tombak, Ali ; Ayguavives, Francisco Tito ; Maria, Jon Paul ; Stauf, Gregory T. ; Kingon, Angus I. ; Mortazawi, Amir. / Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications. In: IEEE MTT-S International Microwave Symposium Digest. 2000 ; Vol. 3. pp. 1345-1348.
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Low voltage tunable barium strontium titanate thin film capacitors for RF and microwave applications. / Tombak, Ali; Ayguavives, Francisco Tito; Maria, Jon Paul; Stauf, Gregory T.; Kingon, Angus I.; Mortazawi, Amir.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 3, 01.01.2000, p. 1345-1348.

Research output: Contribution to journalArticle

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