Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence

I. D. Goepfert, E. F. Schubert, Joan Marie Redwing

Research output: Contribution to journalConference article

Abstract

We investigate the optical properties of n-type Gallium Nitride (GaN) with concentrations ranging from 5×1016 to 7×1018 cm-3. The near-band edge ultraviolet (UV) transition increases monotonically with the doping concentration. The photoluminescence linewidth of the near-bandgap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled by taking into account potential fluctuations caused by the random distribution of donor impurities. Excellent agreement is found between experimental and theoretical results. We also investigate the origin of the yellow luminescence in GaN. At low excitation densities the experimental ratio of the UV-to-yellow photoluminescence does not change significantly as the doping concentration is increased by two orders of magnitude. Analysis of the luminescence in terms of a theoretical model indicates that the yellow luminescence is due to compensating impurities or defects.

Original languageEnglish (US)
Pages (from-to)679-684
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

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Gallium nitride
gallium nitrides
Luminescence
Doping (additives)
luminescence
Defects
defects
Photoluminescence
Impurities
Optical transitions
photoluminescence
Linewidth
impurities
Energy gap
Optical properties
statistical distributions
optical transition
optical properties
gallium nitride
excitation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{39c4bb555cb34684a0738ba52594920f,
title = "Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence",
abstract = "We investigate the optical properties of n-type Gallium Nitride (GaN) with concentrations ranging from 5×1016 to 7×1018 cm-3. The near-band edge ultraviolet (UV) transition increases monotonically with the doping concentration. The photoluminescence linewidth of the near-bandgap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled by taking into account potential fluctuations caused by the random distribution of donor impurities. Excellent agreement is found between experimental and theoretical results. We also investigate the origin of the yellow luminescence in GaN. At low excitation densities the experimental ratio of the UV-to-yellow photoluminescence does not change significantly as the doping concentration is increased by two orders of magnitude. Analysis of the luminescence in terms of a theoretical model indicates that the yellow luminescence is due to compensating impurities or defects.",
author = "Goepfert, {I. D.} and Schubert, {E. F.} and Redwing, {Joan Marie}",
year = "1997",
month = "12",
day = "1",
language = "English (US)",
volume = "482",
pages = "679--684",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence. / Goepfert, I. D.; Schubert, E. F.; Redwing, Joan Marie.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 01.12.1997, p. 679-684.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence

AU - Goepfert, I. D.

AU - Schubert, E. F.

AU - Redwing, Joan Marie

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We investigate the optical properties of n-type Gallium Nitride (GaN) with concentrations ranging from 5×1016 to 7×1018 cm-3. The near-band edge ultraviolet (UV) transition increases monotonically with the doping concentration. The photoluminescence linewidth of the near-bandgap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled by taking into account potential fluctuations caused by the random distribution of donor impurities. Excellent agreement is found between experimental and theoretical results. We also investigate the origin of the yellow luminescence in GaN. At low excitation densities the experimental ratio of the UV-to-yellow photoluminescence does not change significantly as the doping concentration is increased by two orders of magnitude. Analysis of the luminescence in terms of a theoretical model indicates that the yellow luminescence is due to compensating impurities or defects.

AB - We investigate the optical properties of n-type Gallium Nitride (GaN) with concentrations ranging from 5×1016 to 7×1018 cm-3. The near-band edge ultraviolet (UV) transition increases monotonically with the doping concentration. The photoluminescence linewidth of the near-bandgap optical transition increases from 47 to 78 meV as the doping concentration is increased. The broadening is modeled by taking into account potential fluctuations caused by the random distribution of donor impurities. Excellent agreement is found between experimental and theoretical results. We also investigate the origin of the yellow luminescence in GaN. At low excitation densities the experimental ratio of the UV-to-yellow photoluminescence does not change significantly as the doping concentration is increased by two orders of magnitude. Analysis of the luminescence in terms of a theoretical model indicates that the yellow luminescence is due to compensating impurities or defects.

UR - http://www.scopus.com/inward/record.url?scp=0031388260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031388260&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031388260

VL - 482

SP - 679

EP - 684

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -