Magnetic, electrical transport, and thermoelectric properties of Sr4 Ru3 O10: Evidence for a field-induced electronic phase transition at low temperatures

Zhuan Xu, Xiangfan Xu, Rafael S. Freitas, Zhenyi Long, Meng Zhou, David Fobes, Minghu Fang, Peter Schiffer, Zhiqiang Mao, Ying Liu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.

Original languageEnglish (US)
Article number094405
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number9
DOIs
StatePublished - Sep 10 2007

Fingerprint

Thermoelectric power
Phase transitions
Electronic states
Magnetic fields
Magnetization
electronics
magnetic fields
magnetization
electrical resistivity
Temperature
Oxides
floating
Transition metals
metal oxides
Hysteresis
Temperature distribution
temperature distribution
transition metals
hysteresis
alignment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{51856c2dda4043e9bdab51b2c1e940ea,
title = "Magnetic, electrical transport, and thermoelectric properties of Sr4 Ru3 O10: Evidence for a field-induced electronic phase transition at low temperatures",
abstract = "We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.",
author = "Zhuan Xu and Xiangfan Xu and Freitas, {Rafael S.} and Zhenyi Long and Meng Zhou and David Fobes and Minghu Fang and Peter Schiffer and Zhiqiang Mao and Ying Liu",
year = "2007",
month = "9",
day = "10",
doi = "10.1103/PhysRevB.76.094405",
language = "English (US)",
volume = "76",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "9",

}

Magnetic, electrical transport, and thermoelectric properties of Sr4 Ru3 O10 : Evidence for a field-induced electronic phase transition at low temperatures. / Xu, Zhuan; Xu, Xiangfan; Freitas, Rafael S.; Long, Zhenyi; Zhou, Meng; Fobes, David; Fang, Minghu; Schiffer, Peter; Mao, Zhiqiang; Liu, Ying.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 76, No. 9, 094405, 10.09.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetic, electrical transport, and thermoelectric properties of Sr4 Ru3 O10

T2 - Evidence for a field-induced electronic phase transition at low temperatures

AU - Xu, Zhuan

AU - Xu, Xiangfan

AU - Freitas, Rafael S.

AU - Long, Zhenyi

AU - Zhou, Meng

AU - Fobes, David

AU - Fang, Minghu

AU - Schiffer, Peter

AU - Mao, Zhiqiang

AU - Liu, Ying

PY - 2007/9/10

Y1 - 2007/9/10

N2 - We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.

AB - We report measurements on resistivity, thermopower, and magnetization as a function of temperature and magnetic field on single crystalline Sr4 Ru3 O10 grown by the floating-zone method. The in-plane and c -axis resistivities, magnetization, and the thermopower were found to exhibit a step feature at low temperatures (below roughly 30 K), accompanied by hysteresis behavior when the in-plane field was swept up and down from below 10 kOe to above 20 kOe. In particular, the sharp increase in the thermopower with increasing in-plane magnetic field at low temperatures has not been observed previously in layered transition metal oxides. We propose that these observations can be explained by the existence of a transition between two electronic states in Sr4 Ru3 O10 in low and high in-plane magnetic fields, respectively, and the alignment of domains is responsible for the emergence of a different electronic state as the in-plane field is ramped up.

UR - http://www.scopus.com/inward/record.url?scp=34548722647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548722647&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.76.094405

DO - 10.1103/PhysRevB.76.094405

M3 - Article

AN - SCOPUS:34548722647

VL - 76

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 9

M1 - 094405

ER -