Magnetic field sensing with 4H SiC diodes: N vs P implantation

Corey J. Cochrane, Hannes Kraus, Philip G. Neudeck, David Spry, Ryan J. Waskiewicz, James Ashton, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low- and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsMichael Dudley, Aivars Lelis, Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty
PublisherTrans Tech Publications Ltd
Pages988-992
Number of pages5
ISBN (Print)9783035711455
DOIs
StatePublished - Jan 1 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: Sep 17 2017Sep 22 2017

Publication series

NameMaterials Science Forum
Volume924 MSF
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
CountryUnited States
CityColumbia
Period9/17/179/22/17

Fingerprint

implantation
Diodes
diodes
Magnetic fields
Radiation
Defect structures
Magnetic resonance
magnetic fields
Phosphorus
NASA
electron radiation
Nitrogen
Chemical activation
defects
Annealing
Ions
high energy electrons
Defects
magnetic resonance
phosphorus

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cochrane, C. J., Kraus, H., Neudeck, P. G., Spry, D., Waskiewicz, R. J., Ashton, J., & Lenahan, P. M. (2018). Magnetic field sensing with 4H SiC diodes: N vs P implantation. In M. Dudley, A. Lelis, R. Stahlbush, P. Neudeck, A. Bhalla, & R. P. Devaty (Eds.), Silicon Carbide and Related Materials, 2017 (pp. 988-992). (Materials Science Forum; Vol. 924 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.924.988
Cochrane, Corey J. ; Kraus, Hannes ; Neudeck, Philip G. ; Spry, David ; Waskiewicz, Ryan J. ; Ashton, James ; Lenahan, Patrick M. / Magnetic field sensing with 4H SiC diodes : N vs P implantation. Silicon Carbide and Related Materials, 2017. editor / Michael Dudley ; Aivars Lelis ; Robert Stahlbush ; Philip Neudeck ; Anup Bhalla ; Robert P. Devaty. Trans Tech Publications Ltd, 2018. pp. 988-992 (Materials Science Forum).
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Cochrane, CJ, Kraus, H, Neudeck, PG, Spry, D, Waskiewicz, RJ, Ashton, J & Lenahan, PM 2018, Magnetic field sensing with 4H SiC diodes: N vs P implantation. in M Dudley, A Lelis, R Stahlbush, P Neudeck, A Bhalla & RP Devaty (eds), Silicon Carbide and Related Materials, 2017. Materials Science Forum, vol. 924 MSF, Trans Tech Publications Ltd, pp. 988-992, International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, United States, 9/17/17. https://doi.org/10.4028/www.scientific.net/MSF.924.988

Magnetic field sensing with 4H SiC diodes : N vs P implantation. / Cochrane, Corey J.; Kraus, Hannes; Neudeck, Philip G.; Spry, David; Waskiewicz, Ryan J.; Ashton, James; Lenahan, Patrick M.

Silicon Carbide and Related Materials, 2017. ed. / Michael Dudley; Aivars Lelis; Robert Stahlbush; Philip Neudeck; Anup Bhalla; Robert P. Devaty. Trans Tech Publications Ltd, 2018. p. 988-992 (Materials Science Forum; Vol. 924 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Magnetic field sensing with 4H SiC diodes

T2 - N vs P implantation

AU - Cochrane, Corey J.

AU - Kraus, Hannes

AU - Neudeck, Philip G.

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AU - Ashton, James

AU - Lenahan, Patrick M.

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N2 - We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low- and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

AB - We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low- and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

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Cochrane CJ, Kraus H, Neudeck PG, Spry D, Waskiewicz RJ, Ashton J et al. Magnetic field sensing with 4H SiC diodes: N vs P implantation. In Dudley M, Lelis A, Stahlbush R, Neudeck P, Bhalla A, Devaty RP, editors, Silicon Carbide and Related Materials, 2017. Trans Tech Publications Ltd. 2018. p. 988-992. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.924.988