Abstract
Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.
| Original language | English (US) |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2015 |
| Editors | Mario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti |
| Publisher | Trans Tech Publications Ltd |
| Pages | 265-268 |
| Number of pages | 4 |
| ISBN (Print) | 9783035710427 |
| DOIs | |
| State | Published - Jan 1 2016 |
| Event | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: Oct 4 2015 → Oct 9 2015 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 858 |
| ISSN (Print) | 0255-5476 |
Other
| Other | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 |
|---|---|
| Country | Italy |
| City | Sicily |
| Period | 10/4/15 → 10/9/15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Magnetic field sensing with atomic scale defects in SiC devices. / Cochrane, Corey J.; Blacksberg, Jordana; Lenahan, Patrick M.; Anders, Mark A.
Silicon Carbide and Related Materials 2015. ed. / Mario Saggio; Fabrizio Roccaforte; Filippo Giannazzo; Danilo Crippa; Francesco La Via; Roberta Nipoti. Trans Tech Publications Ltd, 2016. p. 265-268 (Materials Science Forum; Vol. 858).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Magnetic field sensing with atomic scale defects in SiC devices
AU - Cochrane, Corey J.
AU - Blacksberg, Jordana
AU - Lenahan, Patrick M.
AU - Anders, Mark A.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.
AB - Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.
UR - http://www.scopus.com/inward/record.url?scp=84971571930&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971571930&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.858.265
DO - 10.4028/www.scientific.net/MSF.858.265
M3 - Conference contribution
AN - SCOPUS:84971571930
SN - 9783035710427
T3 - Materials Science Forum
SP - 265
EP - 268
BT - Silicon Carbide and Related Materials 2015
A2 - Saggio, Mario
A2 - Roccaforte, Fabrizio
A2 - Giannazzo, Filippo
A2 - Crippa, Danilo
A2 - La Via, Francesco
A2 - Nipoti, Roberta
PB - Trans Tech Publications Ltd
ER -