@inproceedings{53c7412cc2d84b7cacc9f96b78fb8fa5,
title = "Magnetic field sensing with atomic scale defects in SiC devices",
abstract = "Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.",
author = "Cochrane, {Corey J.} and Jordana Blacksberg and Lenahan, {Patrick M.} and Anders, {Mark A.}",
year = "2016",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.858.265",
language = "English (US)",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "265--268",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
note = "16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
}