Magnetic field sensing with atomic scale defects in SiC devices

Corey J. Cochrane, Jordana Blacksberg, Patrick M. Lenahan, Mark A. Anders

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsMario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti
PublisherTrans Tech Publications Ltd
Pages265-268
Number of pages4
ISBN (Print)9783035710427
DOIs
StatePublished - Jan 1 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

Fingerprint

Silicon carbide
silicon carbides
Magnetic fields
Defects
defects
magnetic fields
Magnetic field measurement
high temperature environments
Energy gap
Electronic equipment
industries
Semiconductor materials
sensitivity
electronics
silicon carbide
Industry
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cochrane, C. J., Blacksberg, J., Lenahan, P. M., & Anders, M. A. (2016). Magnetic field sensing with atomic scale defects in SiC devices. In M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (Eds.), Silicon Carbide and Related Materials 2015 (pp. 265-268). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.265
Cochrane, Corey J. ; Blacksberg, Jordana ; Lenahan, Patrick M. ; Anders, Mark A. / Magnetic field sensing with atomic scale defects in SiC devices. Silicon Carbide and Related Materials 2015. editor / Mario Saggio ; Fabrizio Roccaforte ; Filippo Giannazzo ; Danilo Crippa ; Francesco La Via ; Roberta Nipoti. Trans Tech Publications Ltd, 2016. pp. 265-268 (Materials Science Forum).
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abstract = "Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.",
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Cochrane, CJ, Blacksberg, J, Lenahan, PM & Anders, MA 2016, Magnetic field sensing with atomic scale defects in SiC devices. in M Saggio, F Roccaforte, F Giannazzo, D Crippa, F La Via & R Nipoti (eds), Silicon Carbide and Related Materials 2015. Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 265-268, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 10/4/15. https://doi.org/10.4028/www.scientific.net/MSF.858.265

Magnetic field sensing with atomic scale defects in SiC devices. / Cochrane, Corey J.; Blacksberg, Jordana; Lenahan, Patrick M.; Anders, Mark A.

Silicon Carbide and Related Materials 2015. ed. / Mario Saggio; Fabrizio Roccaforte; Filippo Giannazzo; Danilo Crippa; Francesco La Via; Roberta Nipoti. Trans Tech Publications Ltd, 2016. p. 265-268 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Cochrane CJ, Blacksberg J, Lenahan PM, Anders MA. Magnetic field sensing with atomic scale defects in SiC devices. In Saggio M, Roccaforte F, Giannazzo F, Crippa D, La Via F, Nipoti R, editors, Silicon Carbide and Related Materials 2015. Trans Tech Publications Ltd. 2016. p. 265-268. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.858.265