Abstract
The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 90-101 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 5 |
| Issue number | 1 |
| DOIs | |
| State | Published - Mar 1 2005 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering
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Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon. / Lenahan, Patrick M.; Conley, John F.
In: IEEE Transactions on Device and Materials Reliability, Vol. 5, No. 1, 01.03.2005, p. 90-101.Research output: Contribution to journal › Article
TY - JOUR
T1 - Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon
AU - Lenahan, Patrick M.
AU - Conley, John F.
PY - 2005/3/1
Y1 - 2005/3/1
N2 - The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.
AB - The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.
UR - http://www.scopus.com/inward/record.url?scp=20444459904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20444459904&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2005.845475
DO - 10.1109/TDMR.2005.845475
M3 - Article
AN - SCOPUS:20444459904
VL - 5
SP - 90
EP - 101
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
SN - 1530-4388
IS - 1
ER -