Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon

Patrick M. Lenahan, John F. Conley

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.

Original languageEnglish (US)
Pages (from-to)90-101
Number of pages12
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number1
DOIs
StatePublished - Mar 1 2005

Fingerprint

Dielectric films
Silicon
Magnetic resonance
Point defects
Paramagnetic resonance
Defects
MOSFET devices
Semiconductor devices
Electric properties
Permittivity
Metals
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

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Magnetic resonance studies of trapping centers in high-κ dielectric films on silicon. / Lenahan, Patrick M.; Conley, John F.

In: IEEE Transactions on Device and Materials Reliability, Vol. 5, No. 1, 01.03.2005, p. 90-101.

Research output: Contribution to journalArticle

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