Magnetic Tunnel Junction as an On-Chip Temperature Sensor

Abhronil Sengupta, Chamika Mihiranga Liyanagedera, Byunghoo Jung, Kaushik Roy

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Temperature sensors are becoming an increasingly important component in System-on-Chip (SoC) designs with increasing transistor scaling, power density and associated heating effects. This work explores a compact nanoelectronic temperature sensor based on a Magnetic Tunnel Junction (MTJ) structure. The MTJ switches probabilistically depending on the operating temperature in the presence of thermal noise. Performance evaluation of the proposed MTJ temperature sensor, based on experimentally measured device parameters, reveals that the sensor is able to achieve a conversion rate of 2.5K samples/s with energy consumption of 8.8 nJ per conversion (1-2 orders of magnitude lower than state-of-the-art CMOS sensors) for a linear sensing regime of 200-400 K.

Original languageEnglish (US)
Article number11764
JournalScientific reports
Volume7
Issue number1
DOIs
StatePublished - Dec 1 2017

All Science Journal Classification (ASJC) codes

  • General

Fingerprint Dive into the research topics of 'Magnetic Tunnel Junction as an On-Chip Temperature Sensor'. Together they form a unique fingerprint.

  • Cite this