Magnetic tunnel junction reliability assessment under process variations and activity factors and mitigation techniques

Anirudh S. Iyengar, Swaroop Ghosh, Nitin Rathi

Research output: Contribution to journalArticle

Abstract

Time Dependent Dielectric Breakdown (TDDB) is a major concern for the reliability of magnetic tunnel junctions (MTJs) in Spin-Transfer Torque RAM (STTRAM). We provide a breakdown model to capture the MTJ lifetime under dynamic read/write activity factors. We also propose static and dynamic current throttling coupled with circuit and system level techniques to improve the MTJ reliability at the cost of small performance penalty. Simulations using SPLASH benchmarks demonstrate ∼1010× improvement in MTJ reliability of the most frequently accessed cache sets for a minor IPC loss of ∼1.3% for dynamic throttling and ∼2% for static throttling under process variations.

Original languageEnglish (US)
Pages (from-to)217-226
Number of pages10
JournalJournal of Low Power Electronics
Volume14
Issue number2
DOIs
StatePublished - Jun 2018

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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