Magnetization dependent photoconductivity of Ga1-xMn xAs/ZnSe diode structures

S. H. Chun, J. P. Yu, J. S. Lee, Jong Chun Woo, S. J. Potashnik, P. Schiffer, N. Samarth

Research output: Contribution to journalConference articlepeer-review

Abstract

We have observed a significant photoconductivity in a diode structure consisting of Ga1-xMnxAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga1-xMnxAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.

Original languageEnglish (US)
Pages (from-to)135-138
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
StatePublished - Dec 1 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: Sep 12 2004Dec 16 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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