Magnetization reversal by out-of-plane voltage in BiFeO 3 -based multiferroic heterostructures

J. J. Wang, J. M. Hu, Ren Ci Peng, Y. Gao, Y. Shen, L. Q. Chen, C. W. Nan

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Abstract

Voltage controlled 180° magnetization reversal has been achieved in BiFeO 3 -based multiferroic heterostructures, which is promising for the future development of low-power spintronic devices. However, all existing reports involve the use of an in-plane voltage that is unfavorable for practical device applications. Here, we investigate, using phase-field simulations, the out-of-plane (i.e., perpendicular to heterostructures) voltage controlled magnetism in heterostructures consisting of CoFe nanodots and (110) BiFeO 3 thin film or island. It is predicted that the in-plane component of the canted magnetic moment at the CoFe/BiFeO 3 interface can be reversed repeatedly by applying a perpendicular voltage across the bottom (110) BiFeO 3 thin film, which further leads to an in-plane magnetization reversal in the overlaying CoFe nanodot. The non-volatility of such perpendicular voltage controlled magnetization reversal can be achieved by etching the continuous BiFeO 3 film into isolated nanoislands with the same in-plane sizes as the CoFe nanodot. The findings would provide general guidelines for future experimental and engineering efforts on developing the electric-field controlled spintronic devices with BiFeO 3 -based multiferroic heterostructures.

Original languageEnglish (US)
Article number10459
JournalScientific reports
Volume5
DOIs
Publication statusPublished - May 21 2015

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