Magnetization switching modes in nanopillar spin valve under the external field

Houbing Huang, Xingqiao Ma, Tao Yue, Zhihua Xiao, Sanqiang Shi, Long-qing Chen

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field. Magnetization switching is found to take place when the current density exceeds a threshold. By analyzing precessional trajectories, evolutions of domain walls and magnetization switching times under the perpendicular magnetic field, there are two different magnetization switching modes: nucleation and domain wall motion reversal; uniform magnetization reversal. The first mode occurs at lower current density, which is realized by the formation of the reversal nucleus and domain wall motion; while the second mode occurs through complete magnetization reversal at higher current density. Furthermore, the switching time reduces as the spin-polarized current density increases, which can also be grouped into two reversal modes.

Original languageEnglish (US)
Pages (from-to)1227-1234
Number of pages8
JournalScience China: Physics, Mechanics and Astronomy
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2011

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magnetization
current density
domain wall
magnetic switching
low currents
high current
trajectories
nucleation
nuclei
thresholds
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Huang, Houbing ; Ma, Xingqiao ; Yue, Tao ; Xiao, Zhihua ; Shi, Sanqiang ; Chen, Long-qing. / Magnetization switching modes in nanopillar spin valve under the external field. In: Science China: Physics, Mechanics and Astronomy. 2011 ; Vol. 54, No. 7. pp. 1227-1234.
@article{9ac83abe3ac4426d81555c2a32823b13,
title = "Magnetization switching modes in nanopillar spin valve under the external field",
abstract = "The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field. Magnetization switching is found to take place when the current density exceeds a threshold. By analyzing precessional trajectories, evolutions of domain walls and magnetization switching times under the perpendicular magnetic field, there are two different magnetization switching modes: nucleation and domain wall motion reversal; uniform magnetization reversal. The first mode occurs at lower current density, which is realized by the formation of the reversal nucleus and domain wall motion; while the second mode occurs through complete magnetization reversal at higher current density. Furthermore, the switching time reduces as the spin-polarized current density increases, which can also be grouped into two reversal modes.",
author = "Houbing Huang and Xingqiao Ma and Tao Yue and Zhihua Xiao and Sanqiang Shi and Long-qing Chen",
year = "2011",
month = "7",
day = "1",
doi = "10.1007/s11433-011-4313-1",
language = "English (US)",
volume = "54",
pages = "1227--1234",
journal = "Science China: Physics, Mechanics and Astronomy",
issn = "1674-7348",
publisher = "Science in China Press",
number = "7",

}

Magnetization switching modes in nanopillar spin valve under the external field. / Huang, Houbing; Ma, Xingqiao; Yue, Tao; Xiao, Zhihua; Shi, Sanqiang; Chen, Long-qing.

In: Science China: Physics, Mechanics and Astronomy, Vol. 54, No. 7, 01.07.2011, p. 1227-1234.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetization switching modes in nanopillar spin valve under the external field

AU - Huang, Houbing

AU - Ma, Xingqiao

AU - Yue, Tao

AU - Xiao, Zhihua

AU - Shi, Sanqiang

AU - Chen, Long-qing

PY - 2011/7/1

Y1 - 2011/7/1

N2 - The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field. Magnetization switching is found to take place when the current density exceeds a threshold. By analyzing precessional trajectories, evolutions of domain walls and magnetization switching times under the perpendicular magnetic field, there are two different magnetization switching modes: nucleation and domain wall motion reversal; uniform magnetization reversal. The first mode occurs at lower current density, which is realized by the formation of the reversal nucleus and domain wall motion; while the second mode occurs through complete magnetization reversal at higher current density. Furthermore, the switching time reduces as the spin-polarized current density increases, which can also be grouped into two reversal modes.

AB - The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field. Magnetization switching is found to take place when the current density exceeds a threshold. By analyzing precessional trajectories, evolutions of domain walls and magnetization switching times under the perpendicular magnetic field, there are two different magnetization switching modes: nucleation and domain wall motion reversal; uniform magnetization reversal. The first mode occurs at lower current density, which is realized by the formation of the reversal nucleus and domain wall motion; while the second mode occurs through complete magnetization reversal at higher current density. Furthermore, the switching time reduces as the spin-polarized current density increases, which can also be grouped into two reversal modes.

UR - http://www.scopus.com/inward/record.url?scp=79960356815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960356815&partnerID=8YFLogxK

U2 - 10.1007/s11433-011-4313-1

DO - 10.1007/s11433-011-4313-1

M3 - Article

VL - 54

SP - 1227

EP - 1234

JO - Science China: Physics, Mechanics and Astronomy

JF - Science China: Physics, Mechanics and Astronomy

SN - 1674-7348

IS - 7

ER -