Magnetization switching using topological surface states

Peng Li; James Kally; Steven S.L. Zhang; Timothy Pillsbury; Jinjun Ding; Gyorgy Csaba; Junjia Ding; J. S. Jiang; Yunzhi Liu; Robert Sinclair; Chong Bi; August DeMann; Gaurab Rimal; Wei Zhang; Stuart B. Field; Jinke Tang; Weigang Wang; Olle G. Heinonen; Valentine Novosad; Axel Hoffmann; Nitin Samarth; Mingzhong Wu

doi:10.1126/sciadv.aaw3415

Magnetization switching using topological surface states

Peng Li, James Kally, Steven S.L. Zhang, Timothy Pillsbury, Jinjun Ding, Gyorgy Csaba, Junjia Ding, J. S. Jiang, Yunzhi Liu, Robert Sinclair, Chong Bi, August DeMann, Gaurab Rimal, Wei Zhang, Stuart B. Field, Jinke Tang, Weigang Wang, Olle G. Heinonen, Valentine Novosad, Axel HoffmannNitin Samarth, Mingzhong Wu

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Abstract

Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi₂Se₃ and an insulating ferromagnet BaFe₁₂O₁₉. A charge current in Bi₂Se₃ can switch the magnetization in BaFe₁₂O₁₉ up and down. When the magnetization is switched by a field, a current in Bi₂Se₃ can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe₁₂O₁₉. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

Original language	English (US)
Article number	eaaw3415
Journal	Science Advances
Volume	5
Issue number	8
DOIs	https://doi.org/10.1126/sciadv.aaw3415
State	Published - Aug 30 2019

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Li, P., Kally, J., Zhang, S. S. L., Pillsbury, T., Ding, J., Csaba, G., Ding, J., Jiang, J. S., Liu, Y., Sinclair, R., Bi, C., DeMann, A., Rimal, G., Zhang, W., Field, S. B., Tang, J., Wang, W., Heinonen, O. G., Novosad, V., ... Wu, M. (2019). Magnetization switching using topological surface states. Science Advances, 5(8), [eaaw3415]. https://doi.org/10.1126/sciadv.aaw3415

@article{80e5ca3871544f5288d91e1d68b56fe5,

title = "Magnetization switching using topological surface states",

abstract = "Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.",

author = "Peng Li and James Kally and Zhang, {Steven S.L.} and Timothy Pillsbury and Jinjun Ding and Gyorgy Csaba and Junjia Ding and Jiang, {J. S.} and Yunzhi Liu and Robert Sinclair and Chong Bi and August DeMann and Gaurab Rimal and Wei Zhang and Field, {Stuart B.} and Jinke Tang and Weigang Wang and Heinonen, {Olle G.} and Valentine Novosad and Axel Hoffmann and Nitin Samarth and Mingzhong Wu",

note = "Funding Information: The fabrication and characterization of the samples and the electrical measurements were supported mainly by the U.S. National Science Foundation under grant no. EFMA-1641989. The data analyses were supported mainly by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award DE-SC0018994. Work at PSU was supported by the Pennsylvania State Two-Dimensional Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under the U.S. National Science Foundation grant no. DMR-1539916. Work at Argonne was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. Work at UW was supported by the U.S. National Science Foundation under grant no. DMR-1710512. Work at Arizona was supported by the NSF under grant no. ECCS-1554011. Publisher Copyright: {\textcopyright} 2019 The Authors,",

year = "2019",

month = aug,

day = "30",

doi = "10.1126/sciadv.aaw3415",

language = "English (US)",

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Li, P, Kally, J, Zhang, SSL, Pillsbury, T, Ding, J, Csaba, G, Ding, J, Jiang, JS, Liu, Y, Sinclair, R, Bi, C, DeMann, A, Rimal, G, Zhang, W, Field, SB, Tang, J, Wang, W, Heinonen, OG, Novosad, V, Hoffmann, A, Samarth, N & Wu, M 2019, 'Magnetization switching using topological surface states', Science Advances, vol. 5, no. 8, eaaw3415. https://doi.org/10.1126/sciadv.aaw3415

TY - JOUR

T1 - Magnetization switching using topological surface states

AU - Li, Peng

AU - Kally, James

AU - Zhang, Steven S.L.

AU - Pillsbury, Timothy

AU - Ding, Jinjun

AU - Csaba, Gyorgy

AU - Ding, Junjia

AU - Jiang, J. S.

AU - Liu, Yunzhi

AU - Sinclair, Robert

AU - Bi, Chong

AU - DeMann, August

AU - Rimal, Gaurab

AU - Zhang, Wei

AU - Field, Stuart B.

AU - Tang, Jinke

AU - Wang, Weigang

AU - Heinonen, Olle G.

AU - Novosad, Valentine

AU - Hoffmann, Axel

AU - Samarth, Nitin

AU - Wu, Mingzhong

N1 - Funding Information: The fabrication and characterization of the samples and the electrical measurements were supported mainly by the U.S. National Science Foundation under grant no. EFMA-1641989. The data analyses were supported mainly by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award DE-SC0018994. Work at PSU was supported by the Pennsylvania State Two-Dimensional Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under the U.S. National Science Foundation grant no. DMR-1539916. Work at Argonne was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division. Work at UW was supported by the U.S. National Science Foundation under grant no. DMR-1710512. Work at Arizona was supported by the NSF under grant no. ECCS-1554011. Publisher Copyright: © 2019 The Authors,

PY - 2019/8/30

Y1 - 2019/8/30

N2 - Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

AB - Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

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DO - 10.1126/sciadv.aaw3415

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AN - SCOPUS:85071571779

SN - 2375-2548

VL - 5

JO - Science advances

JF - Science advances

IS - 8

M1 - eaaw3415

ER -

Magnetization switching using topological surface states

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