Magnetization switching using topological surface states

Peng Li, James Kally, Steven S.L. Zhang, Timothy Pillsbury, Jinjun Ding, Gyorgy Csaba, Junjia Ding, J. S. Jiang, Yunzhi Liu, Robert Sinclair, Chong Bi, August DeMann, Gaurab Rimal, Wei Zhang, Stuart B. Field, Jinke Tang, Weigang Wang, Olle G. Heinonen, Valentine Novosad, Axel HoffmannNitin Samarth, Mingzhong Wu

Research output: Contribution to journalArticle

Abstract

Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

Original languageEnglish (US)
Article numbereaaw3415
JournalScience Advances
Volume5
Issue number8
DOIs
StatePublished - Aug 30 2019

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magnetization
insulators
conductivity
torque
orbits
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • General

Cite this

Li, P., Kally, J., Zhang, S. S. L., Pillsbury, T., Ding, J., Csaba, G., ... Wu, M. (2019). Magnetization switching using topological surface states. Science Advances, 5(8), [eaaw3415]. https://doi.org/10.1126/sciadv.aaw3415
Li, Peng ; Kally, James ; Zhang, Steven S.L. ; Pillsbury, Timothy ; Ding, Jinjun ; Csaba, Gyorgy ; Ding, Junjia ; Jiang, J. S. ; Liu, Yunzhi ; Sinclair, Robert ; Bi, Chong ; DeMann, August ; Rimal, Gaurab ; Zhang, Wei ; Field, Stuart B. ; Tang, Jinke ; Wang, Weigang ; Heinonen, Olle G. ; Novosad, Valentine ; Hoffmann, Axel ; Samarth, Nitin ; Wu, Mingzhong. / Magnetization switching using topological surface states. In: Science Advances. 2019 ; Vol. 5, No. 8.
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abstract = "Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.",
author = "Peng Li and James Kally and Zhang, {Steven S.L.} and Timothy Pillsbury and Jinjun Ding and Gyorgy Csaba and Junjia Ding and Jiang, {J. S.} and Yunzhi Liu and Robert Sinclair and Chong Bi and August DeMann and Gaurab Rimal and Wei Zhang and Field, {Stuart B.} and Jinke Tang and Weigang Wang and Heinonen, {Olle G.} and Valentine Novosad and Axel Hoffmann and Nitin Samarth and Mingzhong Wu",
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Li, P, Kally, J, Zhang, SSL, Pillsbury, T, Ding, J, Csaba, G, Ding, J, Jiang, JS, Liu, Y, Sinclair, R, Bi, C, DeMann, A, Rimal, G, Zhang, W, Field, SB, Tang, J, Wang, W, Heinonen, OG, Novosad, V, Hoffmann, A, Samarth, N & Wu, M 2019, 'Magnetization switching using topological surface states', Science Advances, vol. 5, no. 8, eaaw3415. https://doi.org/10.1126/sciadv.aaw3415

Magnetization switching using topological surface states. / Li, Peng; Kally, James; Zhang, Steven S.L.; Pillsbury, Timothy; Ding, Jinjun; Csaba, Gyorgy; Ding, Junjia; Jiang, J. S.; Liu, Yunzhi; Sinclair, Robert; Bi, Chong; DeMann, August; Rimal, Gaurab; Zhang, Wei; Field, Stuart B.; Tang, Jinke; Wang, Weigang; Heinonen, Olle G.; Novosad, Valentine; Hoffmann, Axel; Samarth, Nitin; Wu, Mingzhong.

In: Science Advances, Vol. 5, No. 8, eaaw3415, 30.08.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Magnetization switching using topological surface states

AU - Li, Peng

AU - Kally, James

AU - Zhang, Steven S.L.

AU - Pillsbury, Timothy

AU - Ding, Jinjun

AU - Csaba, Gyorgy

AU - Ding, Junjia

AU - Jiang, J. S.

AU - Liu, Yunzhi

AU - Sinclair, Robert

AU - Bi, Chong

AU - DeMann, August

AU - Rimal, Gaurab

AU - Zhang, Wei

AU - Field, Stuart B.

AU - Tang, Jinke

AU - Wang, Weigang

AU - Heinonen, Olle G.

AU - Novosad, Valentine

AU - Hoffmann, Axel

AU - Samarth, Nitin

AU - Wu, Mingzhong

PY - 2019/8/30

Y1 - 2019/8/30

N2 - Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

AB - Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi2Se3 and an insulating ferromagnet BaFe12O19. A charge current in Bi2Se3 can switch the magnetization in BaFe12O19 up and down. When the magnetization is switched by a field, a current in Bi2Se3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe12O19. These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.

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U2 - 10.1126/sciadv.aaw3415

DO - 10.1126/sciadv.aaw3415

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VL - 5

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JF - Indian Journal of Pure and Applied Physics

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Li P, Kally J, Zhang SSL, Pillsbury T, Ding J, Csaba G et al. Magnetization switching using topological surface states. Science Advances. 2019 Aug 30;5(8). eaaw3415. https://doi.org/10.1126/sciadv.aaw3415