Magnetoelectric Coupling by Piezoelectric Tensor Design

J. Irwin, S. Lindemann, W. Maeng, J. J. Wang, V. Vaithyanathan, J. M. Hu, L. Q. Chen, D. G. Schlom, C. B. Eom, M. S. Rzchowski

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2 Scopus citations

Abstract

Strain-coupled magnetoelectric (ME) phenomena in piezoelectric/ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain manipulates the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the large reduction of in-plane piezoelectric strain by substrate clamping, and in two-terminal devices, the requirement of anisotropic in-plane strain. Here we show that these limitations can be overcome by designing the piezoelectric strain tensor using the boundary interaction between biased and unbiased piezoelectric. We fabricated 500 nm thick, (001) oriented [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting electric field-driven Ni magnetization rotation. We develop a method that can apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.

Original languageEnglish (US)
Article number19158
JournalScientific reports
Volume9
Issue number1
DOIs
StatePublished - Dec 1 2019

All Science Journal Classification (ASJC) codes

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    Irwin, J., Lindemann, S., Maeng, W., Wang, J. J., Vaithyanathan, V., Hu, J. M., Chen, L. Q., Schlom, D. G., Eom, C. B., & Rzchowski, M. S. (2019). Magnetoelectric Coupling by Piezoelectric Tensor Design. Scientific reports, 9(1), [19158]. https://doi.org/10.1038/s41598-019-55139-1