Magnetoelectric flexural gate transistor with nanotesla sensitivity

Feng Li, Rajiv Misra, Zhao Fang, Yufei Wu, Peter Schiffer, Qiming Zhang, Srinivas A. Tadigadapa, Suman Datta

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magnetoelectric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1S)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/μT and a minimum detectable field of 60 nT/Hz at 1 Hz and 1.5 mV/μT and 150 pT/Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications. [2012-0088]

Original languageEnglish (US)
Article number6301667
Pages (from-to)71-79
Number of pages9
JournalJournal of Microelectromechanical Systems
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2013

Fingerprint

Magnetic sensors
Transistors
Magnetic fields
Sensors
Sensor arrays
Cantilever beams
Field effect transistors
Imaging techniques
Fabrication
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Li, Feng ; Misra, Rajiv ; Fang, Zhao ; Wu, Yufei ; Schiffer, Peter ; Zhang, Qiming ; Tadigadapa, Srinivas A. ; Datta, Suman. / Magnetoelectric flexural gate transistor with nanotesla sensitivity. In: Journal of Microelectromechanical Systems. 2013 ; Vol. 22, No. 1. pp. 71-79.
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abstract = "Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magnetoelectric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1S)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/μT and a minimum detectable field of 60 nT/Hz at 1 Hz and 1.5 mV/μT and 150 pT/Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications. [2012-0088]",
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Li, F, Misra, R, Fang, Z, Wu, Y, Schiffer, P, Zhang, Q, Tadigadapa, SA & Datta, S 2013, 'Magnetoelectric flexural gate transistor with nanotesla sensitivity', Journal of Microelectromechanical Systems, vol. 22, no. 1, 6301667, pp. 71-79. https://doi.org/10.1109/JMEMS.2012.2215012

Magnetoelectric flexural gate transistor with nanotesla sensitivity. / Li, Feng; Misra, Rajiv; Fang, Zhao; Wu, Yufei; Schiffer, Peter; Zhang, Qiming; Tadigadapa, Srinivas A.; Datta, Suman.

In: Journal of Microelectromechanical Systems, Vol. 22, No. 1, 6301667, 01.01.2013, p. 71-79.

Research output: Contribution to journalArticle

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N2 - Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magnetoelectric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1S)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/μT and a minimum detectable field of 60 nT/Hz at 1 Hz and 1.5 mV/μT and 150 pT/Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications. [2012-0088]

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